Drain-Source Body Diode Ratings and Characteristics
T
C
= 25 °C
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= - 10 A, dI/dt = 100 A/µs
I
F
= - 10 A, V
GS
= 0 V
- 0.8
38
2.3
40
- 36
- 100
- 1.5
57
3.5
60
A
V
ns
A
nC
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
DT
www.daysemi.jp
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
40
V
GS
= 10 V thru 4 V
0.030
0.025
R
DS(on)
- On-Resistance (Ω)
30
I
D
- Drain Current (A)
0.020
V
GS
= 4.5 V
20
0.015
V
GS
= 10 V
10
V
GS
= 3 V
0.010
0
0
0.5
1
1.5
2
V
DS
- Drain-to-Source Voltage (V)
0.005
0
20
40
60
I
D
- Drain Current (A)
80
100
Output Characteristics
1.0
On-Resistance vs. Drain Current
0.040
I
D
= 14 A
0.8
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
0.034
0.6
T
C
= 25
°C
0.4
0.028
0.022
T
J
= 125
°C
0.2
T
C
= 125
°C
T
C
= - 55
°C
0
0.7
1.4
2.1
2.8
3.5
V
GS
- Gate-to-Source Voltage (V)
0.016
T
J
= 25
°C
0
0.010
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
Transfer Characteristics
50
T
C
= - 55 °C
40
g
fs
- Transconductance (S)
T
C
= 25 °C
V
GS
- Gate-to-Source Voltage (V)
8
On-Resistance vs. Gate-to-Source Voltage
10
I
D
= 14 A
V
DS
= 20 V
6
V
DS
= 10 V
4
V
DS
= 32 V
30
T
C
= 125 °C
20
10
2
0
0
6
12
18
24
30
I
D
- Drain Current (A)
0
0
14
28
42
56
70
Q
g
- Total Gate Charge (nC)
Transconductance
Gate Charge
3
DT
www.daysemi.jp
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
2.3
I
D
= 250 μA
2.0
I
S
- Source Current (A)
10
T
J
= 150
°C
V
GS(th)
(V)
1.7
1
T
J
= 25
°C
1.4
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
1.1
- 50
- 25
0
25
50
75
100
125
150
T
J
- Temperature (°C)
Source-Drain Diode Forward Voltage
Threshold Voltage
4300
51
I
D
= 250 μA
3440
C - Capacitance (pF)
C
iss
2580
V
DS
(V) Drain-to-Source Voltage
49
47
1720
45
860
C
rss
0
0
C
oss
10
20
30
V
DS
- Drain-to-Source Voltage (V)
40
43
- 50
- 25
0
25
50
75
100
125
150
T
J
- Temperature (°C)
Capacitance
2.2
I
D
= 14 A
R
DS(on)
- On-Resistance (Normalized)
Drain Source Breakdown vs. Junction Temperature
40
1.9
V
GS
= 10 V
30
1.6
V
GS
= 4.5 V
I
D
- Drain Current (A)
150
20
1.3
10
1.0
0.7
- 50
0
- 25
0
25
50
75
100
125
0
25
T
J
- Junction Temperature (°C)
50
75
100
T
C
- Case Temperature (°C)
125
150
On-Resistance vs. Junction Temperature
Current Derating
4
DT
www.daysemi.jp
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
1000
100
I
D
- Drain Current (A)
100 μs
10
1 ms
10 ms
DC, 1 s, 100 ms
T
J
= 150
°C
I
DAV
(A)
T
J
= 25
°C
10
Limited by R
DS(on)
*
1
0.1
T
C
= 25
°C
Single Pulse
0.1
BVDSS Limited
100
1
0.000001
0.01
0.00001
0.0001
0.001
0.01
0.1
Time (s)
1
10
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Single Pulse Avalanche Current Capability vs. Time
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