N-Channel Enhancement MosFET Transistor
BSS123
Features
Low On-resistance.
High-speed Switching.
Drive Circuits Can Be Simple.
Parallel Use Is Easy.
BSS123
SOT-23
BSS123W
SOT-323
Pb
Lead-free
Typical Applications
N-channel Enhancement Mode Effect Transistor.
Switching Application.
Mechanical Data
Case: SOT-23, SOT-323.
Molding Compound, UL Flammability
Classification Rating 94V-0.
Terminals: Matte Tin Plated Leads, Solderable Per
MIL-STD-202, Method 208.
Ordering Information
Part Number
BSS123□
BSS123W□
□:
none is for Lead Free package;
“G” is for Halogen Free package.
Package
SOT-23
SOT-323
Shipping
3000/Tape&Reel
3000/Tape&Reel
Marking Code
B123
B123
Maximum Ratings
(@T
A
=25℃ unless otherwise specified)
Parameter
Drain-Source Voltage
Gate -Source Voltage
Continuous Drain Current
Pulsed Drain Current
(NOTE4)
Power Dissipation
SOT-23
SOT-323
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
0.20
Value
100
±20
170
680
0.35
W
Units
V
V
mA
mA
Thermal Characteristics
Parameter
Thermal Resistance Junction to Ambient Air
Operating Junction Temperature Range
Storage Temperature Range
SOT-23
SOT-323
T
j
T
STG
Symbol
R
θJA
625
150
-55 to +150
℃
℃
Limits
357
℃/W
Unit
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N-Channel Enhancement MosFET Transistor
BSS123
Electrical Characteristics
(@T
A
=25℃ unless otherwise specified)
Symbol
OFF Characteristics
V
DSS
I
DSS
I
GSS
Drain-Source Breakdown Voltage
Drain to Source Leakage Current
Gate-body Leakage
V
GS
=0V,I
D
=250μA
V
DS
=100V, V
GS
=0V
V
DS
=20, V
GS
=0V
V
GS
=±20V, V
DS
=0V
-
-
100
-
-
-
-
1
10
±1
V
uA
nA
uA
Parameter
Test conditions
MIN
TYP
MAX
UNIT
ON Characteristics
(NOTE2)
R
DS(ON)
V
GS(TH)
Static Drain-Source On-resistance
Gate Threshold Voltage
V
GS
=4.5V, I
D
=0.17A
V
GS
=10V, I
D
=0.17A
V
DS
= V
GS
, I
D
=250uA
-
-
1
3.5
3.0
1.9
10
6
2.8
Ω
V
Dynamic Characteristics
(NOTE3)
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V
V
DS
= 20V
f = 1.0MHz
-
-
-
43
15
2.8
-
pF
Switching Characteristics
(NOTE3)
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DD
=30V,I
D
=0.28A
V
GS
=10V,R
G
=50Ω
-
-
-
-
-
-
-
-
8
8
13
16
nS
Source-Drain Diode Characteristics
V
SD
NOTE:
1、 Surface Mounted on FR4 Board, t ≤ 10 sec
2、 Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
3、 Guaranteed by design, not subject to production.
4、 Pulse width limited by maximum junction temperature.
Diode Forward Voltage
(NOTE1)
I
S
=0.3A,V
GS
=0V
-
0.85
1.3
V
Ratings and Characteristic Curves
(T
A
=25℃ unless otherwise noted)
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N-Channel Enhancement MosFET Transistor
BSS123
MTM0038A
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N-Channel Enhancement MosFET Transistor
BSS123
Package Outline Dimensions
(unit:mm)
SOT-23
A
SOT-23
Dim
E
Min
2.70
1.10
0.90
0.30
0.35
1.80
0.02
0.05
2.20
Max
3.10
1.50
1.10
0.50
0.48
2.00
0.10
0.15
2.60
A
B
C
D
K
B
D
G
J
E
G
H
H
C
J
K
SOT-323
A
C
SOT-323
Dim
A
B
Min
2.00
1.15
0.90
0.15
0.25
1.20
0.02
0.05
2.20
Max
2.20
1.35
1.10
0.35
0.40
1.40
0.10
0.15
2.40
B
K
C
E
D
J
D
G
E
G
H
H
J
K
Mounting Pad Layout
(unit:mm)
SOT-23
0.95
0.95
2.00
0.90
0.80
MTM0038A
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N-Channel Enhancement MosFET Transistor
BSS123
SOT-323
0.65
0.65
1.90
0.90
0.70
IMPORTANT NOTICE
Galaxy Microelectronics (GME) reserves the right to make changes without further notice to any
product herein to make corrections, modifications , improvements , or other changes. GME does not
assume any liability arising out of the application or use of any product described herein; neither does
it convey any license under its patent rights ,nor the rights of others .
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