Product specification
N-Channel Logic Level Enhancement Mode Field Effect Transistor
BSS123-3L
FEATURES
’Trench’ technology.
Extremely fast switching.
Logic level compatible.
Pb
Lead-free
Applications
Relay driver.
High-speed line driver.
Telephone ringer.
SOT-23-3L
ORDERING INFORMATION
Type No.
BSS123
□
-3L
Marking
B123
Package Code
SOT-23-3L
□:
none is for Lead Free package;
“G” is for Halogen Free package.
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
DSS
V
DGR
V
GSS
I
D(Note 1)
I
DM
I
S
P
D
R
θ
JA(Note 1)
T
J
, Tstg
Parameter
Drain-Source voltage
Drain-Gate voltage R
GS
≤20KΩ
Gate-Surce Voltage
Continuous drain current
Pulsed drain current
tp=10us
Value
100
100
±20
170
680
170
350
357
-55 to +150
Units
V
V
V
mA
mA
mA
mW
℃/W
℃
Continous Source-Drain Diode Current
Power Dissipation
Thermal Resistance,Junction-to-Ambient
Junction and Storage Temperature
MTM0093A
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Product specification
N-Channel Logic Level Enhancement Mode Field Effect Transistor
BSS123-3L
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter
STATIC CHARACTERISTICS
Gate leakage current
Drain-Source Breakdown Voltage
Gate Threshold Voltage
(Note 2)
Zero Gate Voltage Drain Current
Drain-source on-state
resistance
(Note 2)
Forward transfer admittance
(Note 2)
Diode forward voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-On Delay Time
Turn-on rise time
Turn-Off Delay Time
Turn-off fall time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I
GSS
V
(BR)DSS
V
GS(th)
I
DSS
R
DS(on)
g
FS
V
SD
C
ISS
C
OSS
C
RSS
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
V
GS
= 10V
V
DS
=10V
I
D
=0.22A
V
DD
= 30V, V
GS
= 10V,
R
G
=50Ω, I
D
=0.28A
V
DS
=25V,V
GS
=0V,f=1.0MHz
V
GS
=±20V,V
DS
=0V
V
GS
=0V,I
D
=250uA
V
DS
= V
GS
, I
D
=250uA
V
DS
=100V, V
GS
=0V
V
DS
=20V, V
GS
=0V
I
D
=0.17A,V
GS
=4.5V
I
D
=0.17A,V
GS
=10V
V
DS
=10V,I
D
=170mA
I
S
=340mA, V
GS
=0V
-
100
1
-
-
-
-
80
-
-
-
-
-
-
-
-
-
-
-
-
-
1.6
-
-
3.8
3.5
-
-
29
10
2
-
-
-
-
1.4
0.15
0.2
±1
-
2.8
1
10
10
6
-
1.3
60
15
6
8
8
13
16
2
0.25
0.4
nC
ns
pF
uA
V
V
uA
nA
Ω
mS
V
Symbol Test conditions
MIN
TYP
MAX
UNIT
DYNAMIC CHARACTERISTICS
(note 4)
SWITCHING CHARACTERISTICS
(note 3,4)
Notes:
1. Surface mounted on FR4 board using the minimum recommended pad size.
2. Pulse Test : Pulse width=300μs, duty cycle≤2%.
3. Switching characteristics are independent of operating junction temperature.
4. Graranted by design，not subject to producting.
MTM0093A
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