Product Specification
www.jmnic.com
Silicon PNP Power Transistors
2N4901 2N4902 2N4903
DESCRIPTION
・With
TO-3 package
・Complement
to type 2N5067,2N5068,2N5069
・Low
collector-emitter saturation voltage
APPLICATIONS
・For
general–purpose switching
and power amplifier applications.
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2N4901
V
CBO
Collector-base voltage
2N4902
2N4903
2N4901
V
CEO
Collector-emitter voltage
2N4902
2N4903
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
40
60
80
40
60
80
5
5
10
1
87.5
150
-65~200
V
A
A
A
W
℃
℃
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
2.0
UNIT
℃/W
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N4901
V
CEO
Collector-emitter
sustaining voltage
2N4902
2N4903
V
CEsat-1
V
CEsat-2
V
BE
I
CEO
I
CBO
I
CEX
I
EBO
h
FE-1
h
FE-2
f
T
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
I
C
=1A; I
B
=0.1A
I
C
=5A ;I
B
=1A
I
C
=1A ; V
CE
=2V
I
C
=0.2A ;I
B
=0
2N4901 2N4902 2N4903
CONDITIONS
MIN
40
60
80
TYP.
MAX
UNIT
V
0.4
1.5
1.2
1.0
0.1
1.0
2.0
1.0
20
7
4
80
V
V
V
mA
mA
mA
mA
V
CE
=Rated V
CEO
; I
B
=0
V
CB
=Rated V
CBO
; I
E
=0
V
CE
= Rated V
CEO
; V
BE(off)
=1.5V
T
C
=150℃
V
EB
=5V; I
C
=0
I
C
=1A ; V
CE
=2V
I
C
=5A ; V
CE
=2V
I
C
=1A ; V
CE
=10V
MHz
JMnic
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