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DSA30I150PA

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 150V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size111KB,5 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Environmental Compliance
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DSA30I150PA Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 150V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2

DSA30I150PA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLittelfuse
package instructionROHS COMPLIANT, PLASTIC PACKAGE-2
Reach Compliance Codecompliant
Other featuresFREE WHEELING DIODE, HIGH RELIABILITY, LOW NOISE
applicationSOFT RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.8 V
JEDEC-95 codeTO-220AC
JESD-30 codeR-PSFM-T2
Maximum non-repetitive peak forward current200 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current30 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage150 V
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
DSA30I150PA
Schottky Diode Gen ²
V
RRM
I
FAV
V
F
=
=
=
150 V
30 A
0.8 V
High Performance Schottky Diode
Low Loss and Soft Recovery
Single Diode
Part number
DSA30I150PA
Backside: cathode
3
1
Features / Advantages:
Very low Vf
Extremely low switching losses
Low Irm values
Improved thermal behaviour
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Applications:
Rectifiers in switch mode power
supplies (SMPS)
Free wheeling diode in low voltage
converters
Package:
TO-220
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131031c
© 2013 IXYS all rights reserved
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