DSA30C200IB
preliminary
Schottky Diode Gen ²
V
RRM
I
FAV
V
F
=
= 2x
=
200 V
15 A
0.78 V
High Performance Schottky Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DSA30C200IB
Backside: cathode
1
2
3
Features / Advantages:
●
Very low Vf
●
Extremely low switching losses
●
Low Irm values
●
Improved thermal behaviour
●
High reliability circuit operation
●
Low voltage peaks for reduced
protection circuits
●
Low noise switching
Applications:
●
Rectifiers in switch mode power
supplies (SMPS)
●
Free wheeling diode in low voltage
converters
Package:
TO-262 (I2Pak)
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131031b
© 2013 IXYS all rights reserved
DSA30C200IB
preliminary
Schottky
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current, drain current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 175 °C
d = 0.5
T
VJ
= 175 °C
0.53
10.8
1.75
0.50
T
C
= 25°C
t = 10 ms; (50 Hz), sine; V
R
= 0 V
V
R
=
48 V f = 1 MHz
T
VJ
= 45°C
T
VJ
= 25°C
47
85
320
V
mΩ
K/W
K/W
W
A
pF
min.
typ.
max. non-repetitive reverse blocking voltage
max.
200
200
250
2.5
0.94
1.10
0.78
0.95
15
Unit
V
V
µA
mA
V
V
V
V
A
V
R
= 200 V
V
R
= 200 V
I
F
=
I
F
=
I
F
=
I
F
=
15 A
30 A
15 A
30 A
forward voltage drop
I
FAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
C
J
average forward current
T
C
= 155°C
rectangular
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131031b
© 2013 IXYS all rights reserved
DSA30C200IB
preliminary
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
F
C
mounting force with clip
TO-262 (I2Pak)
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
1)
min.
-55
-55
-55
typ.
max.
35
175
150
150
Unit
A
°C
°C
°C
g
N
1.5
20
60
Product Marking
Logo
Part No.
Date Code
Assembly Code
Assembly Line
Part number
D
S
A
30
C
200
IB
=
=
=
=
=
=
=
Diode
Schottky Diode
low VF
Current Rating [A]
Common Cathode
Reverse Voltage [V]
TO-262 (I2Pak) (3)
IXYS
YYWW Z
abcd
Ordering
Standard
Part Number
DSA30C200IB
Marking on Product
DSA30C200IB
Delivery Mode
Tube
Quantity
50
Code No.
512200
Similar Part
DSA30C200PB
Package
TO-220AB (3)
Voltage class
200
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Schottky
* on die level
T
VJ
= 175 °C
V
0 max
R
0 max
0.53
7.6
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131031b
© 2013 IXYS all rights reserved
DSA30C200IB
preliminary
Outlines TO-262 (I2Pak)
E
L2
A
c1
E1
Optional
Note 3
D
4
1
2
3
D1
L1
L
b1
b
c
A1
e
NOTE:
1. This drawing will meet all dimensions requirement of
JEDEC outline TO-262 AA.
2. All metal surface are matte pure tin plated except
trimmed area.
3. Inter locking slot depends upon frame type.
1
2
3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131031b
© 2013 IXYS all rights reserved
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