Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2337
DESCRIPTION
·With
TO-3 package
·Complement
to type 2SA1007
·Wide
area of safe operation
APPLICATIONS
·For
audio frequency power amplifier
applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
150
130
5
10
100
150
-55~150
UNIT
V
V
V
A
W
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Collector output capacitance
Transition frequency
CONDITIONS
I
C
=50mA ;I
B
=0
I
E
=1mA ;I
C
=0
I
C
=5A; I
B
=0.5A
I
C
=1A ; V
CE
=5V
V
CB
=150V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=2A ; V
CE
=5V
I
C
=5A ; V
CE
=5V
I
E
=0; V
CB
=10V;f=1MHz
I
C
=1A ; V
CE
=10V
40
20
MIN
130
5
2SC2337
TYP.
MAX
UNIT
V
V
2.5
1.5
50
50
320
V
V
μA
μA
150
70
pF
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2337
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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