Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2N5264
DESCRIPTION
・With
TO-3 package
・High
speed switching
・High
reliability
APPLICATIONS
・Switching
regulators
・DC-DC
convertor
・Solid
state relay
・General
purpose power amplifiers
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
MAXIMUN RATINGS(Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
T
c
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
300
180
7
7
2
87
165
-65~200
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
MAX
1.0
UNIT
℃/W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=0.1A ; I
B
=0
I
C
=7A; I
B
=1.4A
I
C
=7A; I
B
=1.4A
V
CB
=300V; I
E
=0
V
EB
=7V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=1A ; V
CE
=10V
30
50
MIN
180
TYP.
2N5264
MAX
UNIT
V
1.5
1.2
1
0.1
300
V
V
mA
mA
MHz
JMnic
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