LL4154
Small Signal Switching Diodes
MINI MELF
Features
Silicon epitaxial planar diode
High speed switching diode
500 mW power dissipation
Mechanical Data
Case:
MINI-MELF,glass
case
Polarity: Color band denotes cathode
Weight:
0.031 grams
Dimension in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
２５
ambient temperature unless otherwise specified.
MAXIMUM RATINGS
LL4154
Reverse voltage
Peak reverse voltage
Average forw ard rectified current
half w ave rectification w ith resistive load
V
R
=0V
Forw ard surge current @ t
P
=1µ
s
Pow er dissipation
@ T
A
=
２５
Junction temperature
Storage temperature range
UNITS
V
V
mA
A
mW
V
R
V
RM
I
F(AV)
I
FSM
P
tot
T
J
T
STG
MIN
-
-
-
-
35
-
25
35
150
1)
2.0
500
1)
175
-55 --- +175
1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
ELECTRICAL CHARACTERISTICS
Forw ard voltage @ I
F
=30mA
Leakage current
@ V
R
=25V
@ V
R
=25V T
J
=150
Capacitance
@ V
R
=0V,f=1MH
z,V
HF
=50mV
Reverse breakdown voltage
tested with 5μA pulses
Reverse recovery time
from I
F
=10mA to I
R
=10mA to I
R
=1mA
from I
F
=10mA to I
R
=1mA, V
R
=6V. R
L
=100Ω.
Thermal resistance junction to ambient
Rectification efficiency @ 100MHz,V
RF
=2V
V
F
I
R
I
R
C
J
V
(BR)R
t
rr
R
θJA
ηv
TYP
-
-
-
-
-
-
MAX
1.0
100
100
4.0
-
4
2
500
1)
-
UNITS
V
nA
μA
pF
V
ns
ns
K/W
-
0.45
-
1)Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
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LL4154
Small Signal Switching Diodes
Ratings AND Charactieristic Curves
FIG.1 -- ADMISSIBLE POWER DISSIPATION
NNNNNN
VERSUS AMBIENT TEMPERATURE
FIG.2 -- FORWARD CHARACTERISTICS
mW
1000
900
800
mA
10
3
10
2
P
tot
700
600
500
400
300
200
100
0
0
100
200
℃
I
F
10
T
J
=100
T
J
=25
1
10
-1
T
A
10
-2
0
1
V
F
2V
FIG.3 -- ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
A
100
I
FRM
10
V=tp/T
I
FRM
T=1/fp
tp
n=0
0.1
1
T
0.2
0.5
0.1
10
-5
10
-4
10
-3
10
-2
10
-1
1
10S
tp
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mail:lge@luguang.cn
LL4154
Small Signal Switching Diodes
Ratings AND Charactieristic Curves
FIG.4 -- RECTIFICATION EFFICIENCY
JJJJJJJJMEASUREMENT
CIRCUIT
FIG.5 -- RELATIVE CAPACITANCE VERSUS
JJJJJJJJJJJJJJ
VOLTAGE
1.1
D.U.T.
60
V
RF
=2V
2nF
5K
V
O
Ctot(V
R
)
Ctot(OV)
1.0
T
J
=25
f=1MHz
0.9
0.8
0.7
0
2
4
6
8
1 0V
V
R
FIG.6 -- LEAKAGE CURRENT VERSUS JUNCTION
TEMPERATUREFF
FIG.7 -- DYNAMIC FORWARD RESISTANCE
FFFVERSUS
FORWARD CURRENT
nA
10
4
10
4
T
J
=25℃
f=1MHz
10
3
10
3
r
10
2
F
10
2
10
10
V
R
=50V
1
0
10 0
20 0℃
1
10
-2
10
-1
1
10
I
F
10
2
mA
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