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LL4448

Description
0.15 A, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    Small signal switching diode   
File Size232KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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LL4448 Overview

0.15 A, SILICON, SIGNAL DIODE

LL4448 Parametric

Parameter NameAttribute value
Parts packaging codeMINIMELF
Manufacturer packaging codeMINIMELF
LL4148/LL4448
Fast Switching Surface Mount Diode
MINI MELF
Features
Fast Switching Speed
Surface Mount Package Ideally Suited for
Automatic Insertion
General Purpose Rectification
Silicon Epitaxial Planar Construction
Mechanical Data
Case: MiniMELF
Polarity: Cathode Band
Marking: Cathode Band Only
Weight: 0.12 grams (approx.)
Dimension in millimeters
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Maximum Ratings
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t = 1.0s
@ t = 1.0ms
Power Dissipation (Note 1)
Derate Above 25°C
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
P
d
R
qJA
T
j
, T
STG
300
150
1.0
2.0
500
1.68
300
-65 to +175
LL4148
100
75
53
500
LL4448
Unit
V
V
V
mA
mA
A
mW
mW/°C
K/W
°C
Electrical Characteristics
Characteristic
Maximum Forward Voltage
LL4148
LL4448
LL4448
Symbol
V
FM
Min
¾
0.62
¾
¾
¾
¾
Max
1.0
0.72
1.0
5.0
50
30
25
4.0
4.0
Unit
V
mA
mA
mA
nA
pF
ns
Test Condition
I
F
= 10mA
I
F
= 5.0mA
I
F
= 100mA
V
R
= 75V
V
R
= 70V, T
j
= 150°C
V
R
= 20V, T
j
= 150°C
V
R
= 20V
V
R
= 0, f = 1.0MHz
I
F
= 10mA to I
R
=1.0mA
V
R
= 6.0V, R
L
= 100W
Maximum Peak Reverse Current
Capacitance
Reverse Recovery Time
I
RM
C
j
t
rr
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
http://www.luguang.cn
mail:lge@luguang.cn

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