LL60/LL60P
Schottky Barrier Diodes
30-50 mAMPERES
40-45 VOLTS
Features
*Silicon Epitaxial Planner Diode
*Low Reverse Current and Low Forward Voltage
*Low Current Rectification and High Speed Switching
*High Reliability
*Used in Recorder, Radio, TV, Telephone as Detectors
MINI-MELF
Cathode indification
φ
1.5± 0.1
3.4
+0.3
-0.1
0.4± 0.1
Mechanical Data
*Case : MINI-MELF Glass Case (SOD-80)
*Polarity: Color Band Denotescathode Band
*Weight : Approx 0.05 gram
Dimension in millimeters
Maximum Ratings
(
Characteristic
TA=25 C Unless otherwise noted)
Symbol
V
RRM
I
FSM
I
F
TJ , TSTG
LL60
40
150
30
-65 to +125
LL60P
45
500
50
Unit
V
mA
mA
C
Pepetitive Peak Reverse Voltage
Non-Repetitive Peak Forward Surge Current
@t=1S
Forward Continuous Current, TA =25 C
Operating and Strorage Temperature Range
Electrical Characteristics
Characteristic
Forward Voltage
IF=1 mA
IF=30 mA
IF=200 mA
Rverse Current
V
R
=15V
LL60
LL60P
LL60
LL60P
( TA=25 C Unless otherwise noted)
Symbol
VF
Min
-
-
-
-
Tpy
0.32
0.24
0.65
0.65
Max
0.5
0.5
1.0
1.0
Unit
V
IR
LL60
LL60P
Cj
-
-
Trr
-
-
-
0.1
0.5
2.0
6.0
-
0.5
1.0
-
-
1.0
uA
Junction Capacitance
LL60
V
R
=1V, f=1MHz
LL60P
V
R
=10V, f=1MHz
Reverse Recovery Time
IF=I R=1mA , Irr=1 mA, R
c
=100
PF
nS
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LL60/LL60P
Schottky Barrier Diodes
250
200
IF(mA)
0.70
0.60
0.50
LL6
IR(UA)
LL
60
P
150
100
50
0P
LL6
0
0.40
0.30
LL
0.20
0.10
0.2
0.4
VF(V)
0
0.6
0.8
1.0
0
5
10
15
VR(V)
20
60
25
30
FIG.1 Fowrad Current vs.
Forward Voltage
FIG.2 Reverse Current vs.
Continuous Reverse Votlage
8
7
6
5
C
J
(pF)
LL6
0P
4
3
2
1
0
2
4
6
VF(V)
LL60
8
10
12
FIG.3 Junction Capacitance vs.
Continuous Reverse Applied Voltage
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mail:lge@luguang.cn
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