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IXGH30N50A

Description
Insulated Gate Bipolar Transistor, 50A I(C), 500V V(BR)CES, N-Channel,
CategoryDiscrete semiconductor    The transistor   
File Size645KB,7 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Download Datasheet Parametric View All

IXGH30N50A Overview

Insulated Gate Bipolar Transistor, 50A I(C), 500V V(BR)CES, N-Channel,

IXGH30N50A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerLittelfuse
package instruction,
Reach Compliance Codenot_compliant
Maximum collector current (IC)50 A
Collector-emitter maximum voltage500 V
Maximum landing time (tf)500 ns
Gate emitter threshold voltage maximum5 V
Gate-emitter maximum voltage30 V
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)200 W
Maximum rise time (tr)200 ns
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
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