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SB330

Description
3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size171KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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SB330 Overview

3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD

SB330 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionROHS COMPLIANT, PLASTIC PACKAGE-2
stateACTIVE
packaging shaperound
Package SizeLONG FORM
Terminal formWire
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typerectifier diode
applicationGENERAL PURPOSE
Phase1
Maximum repetitive peak reverse voltage30 V
Maximum average forward current3 A
Maximum non-repetitive peak forward current80 A
SB320-SB370
Schottky Barrier Rectifier
VOLTAGE RANGE: 20 ---
70 V
CURRENT: 3.0 A
Features
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
xxx
For use in low voltage,high frequency inverters free
x
wheeling,and polarity protection applications
The plastic material carries U/L recognition 94V-0
DO - 27
Mechanical Data
Case:JEDEC DO--27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
SB320 SB330
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
(see fig.1)
SB340 SB350 SB360 SB370 UNITS
40
28
40
3.0
50
35
50
60
42
60
70
49
70
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
20
14
20
30
21
30
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
80.0
A
Maximum instantaneous forw ard voltage
@ 3.0 A (Note 1)
Maximum reverse current
@T
A
=25
V
F
I
R
C
J
R
θ
JA
T
J
T
STG
0.5
0.5
20.0
40
40
-55 --- +125
-55 --- +150
0.74
V
at rated DC blocking voltage @T
A
=100
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
10.0
mA
pF
/W
Operating junction temperature range
Storage temperature range
-55 --- +150
NOTE: 1. Pulse test : 300 s pulse width,1% duty cy cle.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient
http://www.luguang.cn
mail:lge@luguang.cn

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SB330 SB320 SB340 SB350 SB360 SB370
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Index Files: 15  2237  2665  1869  2892  1  46  54  38  59 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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