Product Specification
www.jmnic.com
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3 package
・High
DC current gain and low saturation voltage
・High
Safe Operating Area
APPLICATIONS
・Designed
for high power audio, disk head
positioners and other linearapplications.
These devices can also be used in power
switching circuits such as relay or solenoid
drivers, DC-DC converters or inverters.
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N5498
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
150
130
7
15
4
200
150
-65~200
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.17
UNIT
℃/W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO
V
CER
V
CEsat-1
V
CEsat-2
I
CEO
I
CEX
I
EBO
h
FE
f
T
PARAMETER
Collector-emitter breakdwon voltage
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=0.2A ;I
B
=0
I
C
=0.2A ;R
BE
=100Ohm
I
C
=8A; I
B
=0.8A
I
C
=15A ;I
B
=3A
V
CE
=130V; I
B
=0
V
CE
=130V; V
BE(off)
=1.5V
T
C
=150℃
V
EB
=7V; I
C
=0
I
C
=15A ; V
CE
=5V
I
C
=1A ; V
CE
=10V
10
1
MIN
130
150
TYP.
2N5498
MAX
UNIT
V
V
1.4
4.0
2.0
2.0
10.0
1.0
50
V
V
mA
mA
mA
MHz
JMnic
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