2N6653_15 datasheet, PDF - EEWORLD Datasheet

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2N6653_15: DescriptionSilicon NPN Power Transistors; File Size36KB，3 Pages; ManufacturerQuanzhou Jinmei Electronic Co.,Ltd.; Websitehttp://www.jmnic.com/

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2N6653_15 Overview

Silicon NPN Power Transistors

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JMnic

Product Specification

Silicon NPN Power Transistors

DESCRIPTION

・With

TO-3 package

・High

voltage capability

・Fast

switching speeds

・Low

saturation voltage

APPLICATIONS

・Switcing

regulators

・Inverters

・Solenoid

and relay drivers

・Deflection

circuits

PINNING (See Fig.2)

Base

Emitter

DESCRIPTION

2N6653

Fig.1 simplified outline (TO-3) and symbol

Collector

MAXIMUN RATINGS(Ta=25

℃

)

SYMBOL

CBO

CEO

EBO

stg

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector current-peak

Total power dissipation

Junction temperature

Storage temperature

=25℃

CONDITIONS

Open emitter

Open base

Open collector

VALUE

350

300

150

200

-65~200

UNIT

℃

THERMAL CHARACTERISTICS

SYMBOL

th j-c

PARAMETER

Thermal resistance from junction to case

MAX

1.0

UNIT

℃/W

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