JMnic
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3 package
・High
voltage,high speed
APPLICATIONS
・Switching
regulators
・Inverters
・Solenoid
and relay drivers
・Deflection
circuits
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N6674 2N6675
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2N6674
V
CBO
Collector-base voltage
2N6675
2N6674
V
CEO
Collector-emitter voltage
2N6675
V
EBO
I
C
I
B
Emitter-base voltage
Collector current
Base current
T
a
=25℃
P
T
Total Power Dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
175
200
-65~200
℃
℃
Open collector
Open base
400
7
15
5
6
W
V
A
A
Open emitter
650
300
V
CONDITIONS
VALUE
450
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.0
UNIT
℃/W
JMnic
Product Specification
Silicon NPN Power Transistors
2N6674 2N6675
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
2N6674
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N6675
I
C
=0.2A ;I
B
=0
300
V
400
V
CEsat-1
Collector-emitter saturation voltage
I
C
=10A; I
B
=2A
1.0
V
V
CEsat-2
Collector-emitter saturation voltage
I
C
=15A; I
B
=5A
5.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=10A; I
B
=2A
1.5
V
2N6674
I
CBO
Collector cut-off current
2N6675
V
CB
=450V; I
E
=0
0.1
V
CB
=650V; I
E
=0
mA
I
EBO
h
FE-1
Emitter cut-off current
V
EB
=7V; I
C
=0
I
C
=1A ; V
CE
=3V
15
1.0
mA
DC current gain
40
h
FE-2
DC current gain
I
C
=10A ; V
CE
=2V
8
20
f
T
Trainsistion frequency
I
C
=0.5A ; V
CE
=10V;f=1MHz
15
MHz
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N6674 2N6675
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
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