Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2N5606 2N5608 2N5610 2N5612
DESCRIPTION
・With
TO-66 package
・Excellent
safe operating area
・Low
collector-emitter saturation voltage
APPLICATIONS
・For
general-purpose amplifier ;
and switching applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2N5606
V
CBO
Collector-base voltage
2N5608/5610
2N5612
2N5606
V
CEO
Collector-emitter voltage
2N5608/5610
2N5612
V
EBO
I
C
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
60
80
100
80
100
120
5
5
25
150
-65~150
V
A
W
℃
℃
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
4.37
UNIT
℃/W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N5606
V
CEO
Collector-emitter
sustaining voltage
2N5608/5610
2N5612
V
CEsat
V
BE
I
CBO
I
CEO
I
EBO
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
2N5606/5610
h
FE
DC current gain
2N5608/5612
2N5606/5610
f
T
Transition frequency
2N5608/5612
2N5606 2N5608 2N5610 2N5612
CONDITIONS
MIN
60
TYP.
MAX
UNIT
I
C
=50mA ;I
B
=0
80
100
V
I
C
=1A; I
B
=0.1A
I
C
=2.5A ; V
CE
=5V
V
CB
=Rated V
CBO
; I
E
=0
V
CE
= Rated V
CEO
,I
B
=0
V
EB
=5V; I
C
=0
70
I
C
=2.5A ; V
CE
=5V
30
70
I
C
=0.5A ; V
CE
=10V
60
0.5
1.5
0.1
1.0
0.1
200
90
V
V
mA
mA
mA
MHz
JMnic
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