Product Specification
www.jmnic.com
Silicon PNP Power Transistors
2N5743 2N5744
DESCRIPTION
・With
TO-66 package
・Low
collector-emitter saturation voltage
・Fast
switching speed
APPLICATIONS
・For
general–purpose switching
and power amplifier applications.
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbo
l
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
PARAMETER
2N5743
Collector-base voltage
2N5744
2N5743
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Collector-emitter voltage
2N5744
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=100℃
Open collector
Open base
100
5
20
25
150
-65~200
V
A
W
℃
℃
Open emitter
100
60
V
CONDITIONS
VALUE
60
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
0.875
UNIT
℃/W
JMnic
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-emitter
sustaining voltage
2N5743
I
C
=0.2A ;I
B
=0
2N5744
I
C
=10A; I
B
=1A
I
C
=20A ;I
B
=4A
I
C
=10A; I
B
=1A
I
C
=10A ; V
CE
=5V
V
CB
=Rated V
CBO
; I
E
=0
V
CE
= Rated V
CEO
; V
BE(off)
=1.5V
T
C
=150℃
V
EB
=5V; I
C
=0
I
C
=10A ; V
CE
=5V
I
C
=20A ; V
CE
=5V
I
C
=1A ; V
CE
=10V
CONDITIONS
2N5743 2N5744
MIN
60
TYP.
MAX
UNIT
V
CEO
V
100
1.0
3.0
1.8
1.5
0.1
0.5
5.0
1.0
20
10
10
MHz
80
V
V
V
V
mA
mA
mA
V
CEsat-1
V
CEsat-2
V
BEsat
V
BE
I
CBO
I
CEX
I
EBO
h
FE-1
h
FE-2
f
T
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
JMnic
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
PACKAGE OUTLINE
2N5743 2N5744
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
JMnic
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