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2N5804_15

Description
Silicon NPN Power Transistors
File Size50KB,4 Pages
ManufacturerQuanzhou Jinmei Electronic Co.,Ltd.
Websitehttp://www.jmnic.com/
Download Datasheet View All

2N5804_15 Overview

Silicon NPN Power Transistors

Product Specification
www.jmnic.com
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3 package
・High
breakdown
APPLICATIONS
・Switching
regulator
・Inverters
・Solenoid
and relay drivers
・Motor
controls
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N5804 2N5805
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
PARAMETER
2N5804
Collector-base voltage
2N5805
2N5804
V
CEO
V
EBO
I
C
P
D
T
j
T
stg
Collector-emitter voltage
2N5805
Emitter-base voltage
Collector current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
300
6
5
110
150
-65~200
V
A
W
Open emitter
375
225
V
CONDITIONS
VALUE
300
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.25
UNIT
℃/W
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