Product Specification
www.jmnic.com
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3PN package
・Complement
to type 2N5986 2N5987 2N5988
・Low
collector-emitter saturation voltage
APPLICATIONS
・Designed
for use in general purpose
power amplifier and switching circuits.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2N5989 2N5990 2N5991
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2N5989
V
CBO
Collector-base voltage
2N5990
2N5991
2N5989
V
CEO
Collector-emitter voltage
2N5990
2N5991
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
60
80
100
40
60
80
5
12
20
4
100
150
-65~150
V
A
A
A
W
℃
℃
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
1.25
UNIT
℃/W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N5989
V
CEO
Collector-emitter
sustaining voltage
2N5990
2N5991
V
CEsat-1
V
CEsat-2
V
BEsat
V
BE
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
2N5989
I
CEO
Collector cut-off current
2N5990
2N5991
I
CEX
I
EBO
h
FE-1
h
FE-2
h
FE-3
C
OB
f
T
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Output capacitance
Transition frequency
I
C
=6A ;I
B
=0.6A
I
C
=12A; I
B
=1.8A
I
C
=12A; I
B
=1.8A
I
C
=6A ; V
CE
=2V
V
CE
=20V; I
B
=0
V
CE
=30V; I
B
=0
V
CE
=40V; I
B
=0
I
C
=0.2A ;I
B
=0
2N5989 2N5990 2N5991
CONDITIONS
MIN
40
60
80
TYP.
MAX
UNIT
V
0.6
1.7
2.5
1.4
V
V
V
V
2.0
mA
V
CE
=RatedV
CE
;V
BE
=-1.5V
T
C
=125℃
V
EB
=5V; I
C
=0
I
C
=1.5A ; V
CE
=2V
I
C
=6A ; V
CE
=2V
I
C
=12A ; V
CE
=2V
I
E
=0 ; V
CB
=10V;f=1MHz
I
C
=0.5A ; V
CE
=10V;f=1MHz
2.0
40
20
7.0
0.2
2.0
1.0
mA
mA
120
300
pF
MHz
JMnic
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