JMnic
Product Specification
Silicon PNP Power Transistors
2SA1304
DESCRIPTION
・With
TO-220Fa package
・Complement
to type 2SC3296
・High
breakdown voltage
APPLICATIONS
・Power
amplifier applications
・Vertical
output applicatios
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
・
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
T
C
=25℃
P
C
Collector power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
2
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-150
-150
-5
-1.5
-0.5
20
W
V
A
A
UNIT
V
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SA1304
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-10mA , I
B
=0
-150
V
V
CEsat
V
BE
Collector-emitter saturation voltage
I
C
=-500mA; I
B
=-50mA
I
C
=-500mA ; V
CE
=-10V
-1.5
V
Base-emitter on voltage
-0.85
V
μA
μA
I
CBO
Collector cut-off current
V
CB
=-120V;I
E
=0
-10
I
EBO
Emitter cut-off current
V
EB
=-5V; I
C
=0
-10
h
FE
DC current gain
I
C
=-500mA ; V
CE
=-10V
40
140
C
ob
Output capacitance
I
E
=0; V
CB
=-10V,f=1MHz
55
pF
f
T
Transition frequency
I
C
=-500mA ; V
CE
=-10V
4
MHz
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1304
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1304
4