OM300L60CMC datasheet, PDF - EEWORLD Datasheet

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OM300L60CMC: DescriptionInsulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel; CategoryDiscrete semiconductor The transistor; File Size72KB，3 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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OM300L60CMC Overview

Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel

OM300L60CMC Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
package instruction	FLANGE MOUNT, R-XUFM-X7
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	ISOLATED
Collector-emitter maximum voltage	600 V
Configuration	SINGLE WITH BUILT-IN DIODE
JESD-30 code	R-XUFM-X7
JESD-609 code	e0
Number of components	1
Number of terminals	7
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	235
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	UNSPECIFIED
Terminal location	UPPER
Maximum time at peak reflow temperature	30
Transistor component materials	SILICON
Nominal off time (toff)	1150 ns
Nominal on time (ton)	1200 ns

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205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246

ELECTRICAL CHARACTERISTICS:

Characteristic

OM300L60CMC (Tc= 25°C unless otherwise specified)

Symbol

Min.

Typ.

Max

Unit

OFF CHARACTERISTICS

Collector Emitter Breakdown Voltage, V

=0V

Zero Gate Voltage Drain Current, V

=0, V

=600V

Gate Emitter Leakage Current, V

=+/-15V, V

=0V

ON CHARACTERISTICS

Gate Threshold Voltage, V

GE,

=6mA

Collector Emitter Saturation Voltage, V

=15V, IC=300A

DYNAMIC CHARACTERISTICS

Fwd. Transconductance

Input Capacitance

Output Capacitance

Rev. Transfer Capacitance

CES

GES

600

µA

GE(TH)

CE(SAT)

4.5

2.4

6.5

2.7

=5V, I

=300A

=25V

f=1.0MHz

gfs

Cies

Coes

Cres

14000

9500

1120

SWITCHING INDUCTIVE LOAD CHARACTERISTICS

Turn-On Delay Time

Rise Time

= 300V, I

=300A

Turn-on Losses

=+15/-10V, R

=6.8Ω

Turn-off Delay Time

L=100µH,Tj=125°C

Fall Time

Turn-off Losses

DIODE CHARACTERISTICS

Maximum Forward Voltage

t(on)

Eon

td(off)

Eoff

800

400

1600

800

350

1200

800

=300A, Tj=25°C

Tj=125°C

=300V, Tj=25°C

Reverse Recovery

=300A, Tj=125°C

Characteristics

dI/dt=-1500A/µS Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction to Case (Per IGBT)

Thermal Resistance, Junction to Case (Per Diode)

Maximum Junction Temperature

Isolation Voltage

Screw Torque

Mounting

Screw Torque (M6)

Terminals

Screw Torque (M3)

Terminals

Module Weight

Qrr

Irr

trr

1.5

160

220

2.0

µC

thJC

jMAX

Vis

RMS

350

0.11

0.14

150

2500

°C/W

°C

in-lb

Grams

12/8/98

Rev. 03

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