BSM150GB100D datasheet, PDF - EEWORLD Datasheet

BSM150GB100D: DescriptionInsulated Gate Bipolar Transistor, 150A I(C), 1000V V(BR)CES, N-Channel,; CategoryDiscrete semiconductor The transistor; File Size348KB，8 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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BSM150GB100D Overview

Insulated Gate Bipolar Transistor, 150A I(C), 1000V V(BR)CES, N-Channel,

Parameter Name	Attribute value
Maker	SIEMENS
package instruction	FLANGE MOUNT, R-PUFM-X7
Reach Compliance Code	unknown
Shell connection	ISOLATED
Maximum collector current (IC)	150 A
Collector-emitter maximum voltage	1000 V
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate emitter threshold voltage maximum	6.2 V
Gate-emitter maximum voltage	20 V
JESD-30 code	R-PUFM-X7
Number of components	2
Number of terminals	7
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	1250 W
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
transistor applications	POWER CONTROL
Transistor component materials	SILICON
VCEsat-Max	3.3 V

	BSM150GB100D	BSM150GAL100D
Description	Insulated Gate Bipolar Transistor, 150A I(C), 1000V V(BR)CES, N-Channel,	Insulated Gate Bipolar Transistor, 150A I(C), 1000V V(BR)CES, N-Channel
package instruction	FLANGE MOUNT, R-PUFM-X7	FLANGE MOUNT, R-PUFM-X7
Reach Compliance Code	unknown	unknown
Shell connection	ISOLATED	ISOLATED
Maximum collector current (IC)	150 A	150 A
Collector-emitter maximum voltage	1000 V	1000 V
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Gate emitter threshold voltage maximum	6.2 V	6.2 V
Gate-emitter maximum voltage	20 V	20 V
JESD-30 code	R-PUFM-X7	R-PUFM-X7
Number of components	2	1
Number of terminals	7	7
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	1250 W	1250 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	UNSPECIFIED	UNSPECIFIED
Terminal location	UPPER	UPPER
transistor applications	POWER CONTROL	POWER CONTROL
Transistor component materials	SILICON	SILICON
VCEsat-Max	3.3 V	3.3 V

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