BSM 20 GD 60 DN2
IGBT Power Module
• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
Type
BSM 20 GD 60 DN2
BSM 20 GD 60DN2E3224
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
V
CE
600V
600V
I
C
20A
20A
Package
ECONOPACK 2
ECONOPACK 2K
Ordering Code
C67076-A2511-A67
C67070-A2511-A67
Symbol
Values
600
600
Unit
V
V
CE
V
CGR
V
GE
I
C
R
GE
= 20 kΩ
Gate-emitter voltage
DC collector current
± 20
A
20
T
C
= 40 °C
Pulsed collector current,
t
p
= 1 ms
I
Cpuls
40
T
C
= 40 °C
Power dissipation per IGBT
P
tot
90
W
+ 150
-55 ... + 150
≤
1.6
≤
1.8
2500
16
11
F
55 / 150 / 56
sec
Vac
mm
K/W
°C
T
C
= 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage,
t
= 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
T
j
T
stg
R
thJC
R
thJCD
V
is
-
-
-
-
Semiconductor Group
1
Jan-10-1997
BSM 20 GD 60 DN2
Electrical Characteristics,
at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Gate threshold voltage
Values
typ.
max.
Unit
V
GE(th)
4.5
5.5
2.1
2.2
-
-
6.5
2.7
2.8
V
V
GE
=
V
CE,
I
C
= 0.5 mA
Collector-emitter saturation voltage
V
CE(sat)
-
-
V
GE
= 15 V,
I
C
= 20 A,
T
j
= 25 °C
V
GE
= 15 V,
I
C
= 20 A,
T
j
= 125 °C
Zero gate voltage collector current
I
CES
-
1
mA
nA
-
100
V
CE
= 600 V,
V
GE
= 0 V,
T
j
= 25 °C
Gate-emitter leakage current
I
GES
V
GE
= 25 V,
V
CE
= 0 V
AC Characteristics
Transconductance
g
fs
5.5
-
1100
120
66
-
S
pF
-
-
-
-
V
CE
= 20 V,
I
C
= 20 A
Input capacitance
C
iss
C
oss
-
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Output capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Reverse transfer capacitance
C
rss
-
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Semiconductor Group
2
Jan-10-1997
BSM 20 GD 60 DN2
Electrical Characteristics,
at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
min.
Switching Characteristics, Inductive Load at
T
j
= 125 °C
Turn-on delay time
Values
typ.
max.
Unit
t
d(on)
-
40
-
ns
V
CC
= 300 V,
V
GE
= 15 V,
I
C
= 20 A
R
Gon
= 47
Ω
Rise time
t
r
-
70
-
V
CC
= 300 V,
V
GE
= 15 V,
I
C
= 20 A
R
Gon
= 47
Ω
Turn-off delay time
t
d(off)
-
250
-
V
CC
= 300 V,
V
GE
= -15 V,
I
C
= 20 A
R
Goff
= 47
Ω
Fall time
t
f
-
500
-
V
CC
= 300 V,
V
GE
= -15 V,
I
C
= 20 A
R
Goff
= 47
Ω
Free-Wheel Diode
Diode forward voltage
V
F
-
-
1.8
1.6
-
-
V
I
F
= 20 A,
V
GE
= 0 V,
T
j
= 25 °C
I
F
= 20 A,
V
GE
= 0 V,
T
j
= 125 °C
Reverse recovery time
t
rr
-
0.11
-
µs
I
F
= 20 A,
V
R
= -300 V,
V
GE
= 0 V
di
F
/dt = -300 A/µs,
T
j
= 125 °C
Reverse recovery charge
Q
rr
µC
I
F
= 20 A,
V
R
= -300 V,
V
GE
= 0 V
di
F
/dt = -300 A/µs
T
j
= 25 °C
T
j
= 125 °C
-
-
0.6
1.3
-
-
Semiconductor Group
3
Jan-10-1997
BSM 20 GD 60 DN2
Power dissipation
P
tot
=
ƒ
(T
C
)
parameter:
T
j
≤
150 °C
100
W
Safe operating area
I
C
=
ƒ
(V
CE
)
parameter:
D
= 0,
T
C
= 25°C ,
T
j
≤
150 °C
10
2
tp
= 17.0µs
A
P
tot
80
70
60
50
40
I
C
10
1
100 µs
10
0
30
20
10
0
0
10
-1
0
10
DC
10
1
2
1 ms
10 ms
20
40
60
80
100
120
°C
160
10
V 10
3
T
C
V
CE
Collector current
I
C
=
ƒ
(T
C
)
parameter:
V
GE
≥
15 V ,
T
j
≤
150 °C
26
A
22
Transient thermal impedance
Z
th JC
=
ƒ
(t
p
)
parameter:
D = t
p
/
T
10
1
IGBT
K/W
I
C
20
18
16
14
12
10
8
Z
thJC
10
0
10
-1
D = 0.50
0.20
0.10
10
-2
0.05
single pulse
0.02
0.01
6
4
2
0
0
20
40
60
80
100
120
°C
160
10
-3
-5
10
10
-4
10
-3
10
-2
10
-1
s 10
0
T
C
t
p
Semiconductor Group
4
Jan-10-1997
BSM 20 GD 60 DN2
Typ. output characteristics
Typ. output characteristics
I
C
= f (V
CE
)
parameter:
t
p
= 80 µs,
T
j
= 25 °C
40
I
C
= f (V
CE
)
parameter:
t
p
= 80 µs,
T
j
= 125 °C
40
A
I
C
30
17V
15V
13V
11V
9V
7V
A
I
C
30
17V
15V
13V
11V
9V
7V
25
25
20
20
15
15
10
10
5
0
0
5
0
0
1
2
3
V
5
1
2
3
V
5
V
CE
V
CE
Typ. transfer characteristics
I
C
= f (V
GE
)
parameter:
t
p
= 80 µs,
V
CE
= 20 V
40
A
I
C
30
25
20
15
10
5
0
0
2
4
6
8
10
V
14
V
GE
Semiconductor Group
5
Jan-10-1997
京公网安备 11010802033920号
EEWORLD
