BSM25GB120D datasheet, PDF - EEWORLD Datasheet

BSM25GB120D: DescriptionInsulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES; CategoryDiscrete semiconductor The transistor; File Size300KB，7 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BSM25GB120D Overview

Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES

Parameter Name	Attribute value
Maker	Infineon
package instruction	,
Reach Compliance Code	compliant
Maximum collector current (IC)	25 A
Collector-emitter maximum voltage	1200 V
Number of components	1
Maximum power dissipation(Abs)	300 W
VCEsat-Max	2.8 V

	BSM25GB120D	BSM25GAL120D
Description	Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES	Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, POWER MODULE
Maker	Infineon	Infineon
Reach Compliance Code	compliant	unknown
Maximum collector current (IC)	25 A	35 A
Collector-emitter maximum voltage	1200 V	1200 V
Maximum power dissipation(Abs)	300 W	300 W

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