FM120-M
DTA124ECA
THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
WILLAS
PACKAGE
Pb Free Produ
Features
Package outline
SOD-123H
DTA124ECA
better reverse leakage current and thermal resistance.
Features
profile surface mounted application in order to
•
Low
•
•
•
•
Electrical Characteristics @ 25
RATINGS
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Max
12
---
20
-3.0
Unit
13
V
30
V
.008(0.20)
Symbol
Parameter
Min
Typ
Marking Code
-0.5
---
V
I(off)
Input voltage (V
CC
=-5V, I
O
=-100A)
Maximum Recurrent Peak Reverse Voltage
V
---
RRM
---
V
I(on)
(V
O
=-0.2V, I
O
=-5mA)
V
O(on)
---
RMS
---
Maximum
Output voltage (I
O
/I
I
-10mA/-0.5mA
RMS Voltage
=
V
I
I
=
I
-5V)
Input current
Voltage
(V
---
---
Maximum DC Blocking
V
DC
I
O(off)
Output current (V
CC
=
I
0)
=-50V, V
---
---
Maximum
DC current gain (V
O
=-5V, I
O
-5mA)
Average Forward Rectified Current
G
I
=
56
I
O
---
R
1
Input resistance
15.4
22
Peak Forward Surge Current 8.3 ms single half sine-wave
R
2
/R
1
Resistance ratio
0.8
I
FSM
1.0
superimposed on rated load (JEDEC method)
Transition frequency
f
T
---
250
(V
O
=-10V, I
O
=5mA, f=100MHz)
Typical Thermal Resistance (Note 2)
R
ΘJA
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
.003(0.08)
14
40
28
40
15
50
16
60
18
80
56
80
1.0
.020(0.50)
30
.012(0.30)
.083(2.10)
.110(2.80)
Symbol
Parameter
Min
Typ
Max
Unit
Method 2026
V
CC
Supply voltage
---
-50
---
V
Dimensions in inches and (millimeters)
•
Polarity : Indicated by cathode band
V
IN
Input voltage
-40
---
10
V
Mounting Position : Any
•
Output current
-30
I
O
---
---
mA
I
C(MAX)
-100
•
Power dissipation
Weight : Approximated 0.011 gram
P
d
---
200
---
mW
T
j
Junction temperature
---
150
---
ELECTRICAL CHARACTERISTICS
T
stg
Storage
MAXIMUM RATINGS AND
-55
temperature
---
150
Ratings at 25℃ ambient temperature unless otherwise specified.
.006(0.15)MIN.
Guardring
94 V-0 flammability rating
Epoxy
•
meets UL
for overvoltage protection.
•
Ultra high-speed switching.
Moisure Sensitivity Level 1
•
Silicon epitaxial planar
the
metal silicon
of an inverter circuit
Built-in bias resistors enable
chip,
configuration
junction.
•
connecting external input resistors
without
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
The bias resistors consist of thin-film resistors with complete
•
RoHS product for packing code
of the input. They also have the
isolation to allow negative biasing
suffix "G"
Halogen free product for packing code suffix "H"
advantage of almost completely eliminating parasitic effects.
Mechanical data
•
Only the on/off conditions need to be set for operation, making
device
•
design
:
easy
Epoxy UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
Absolute
•
maximum ratings @ 25
solderable per MIL-STD-750 ,
Terminals :Plated terminals,
.063(1.60)
.047(1.20)
optimize board space.
Pb-Free package is available
•
Low power loss, high efficiency.
RoHS product for packing code suffix ”G”
•
High current capability, low forward voltage drop.
Halogen free product for packing code suffix “H”
•
High surge capability.
SOT-23
.122(3.10)
.106(2.70)
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
.080(2.04)
.070(1.78)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
10
100
70
100
115
150
105
150
.055(1.40)
.035(0.89)
120
200
140
200
14
-0.3
21
V
20
-0.36
30
mA
A
-0.5
---
28.6
K¡
1.2
---
35
42
.004(0.10)MAX.
50
60
MHz
C
J
T
J
TSTG
-55 to +125
40
Dimensions in inches and (millimeters)
120
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T A=125℃
0.50
0.70
*Marking: 15
I
R
.035
.900
Suggested Solder
0.85
Pad Layout
0.5
.031
10
.800
0.9
0.92
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
.079
2.000
inches
mm
.037
.950
.037
.950
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
FM120-M
DTA124ECA
THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
SOD-123H
WILLAS
PACKAGE
Pb Free Product
Features
Package outline
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
京公网安备 11010802033920号
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