FM120-M
DTA144ECA
THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
SOD-123H
Features
board space.
optimize
•
•
Low profile surface mounted application in order to
•
•
without connecting
for packing
input
suffix "G"
•
RoHS product
external
code
resistors
The bias resistors
product for
of thin-film resistors with complete
Halogen free
consist
packing code suffix "H"
isolation to allow negative biasing of the input. They also have the
Mechanical data
advantage of almost completely eliminating parasitic effects.
Only
•
Epoxy : UL94-V0 rated flame retardant
for operation, making
the on/off conditions need to be set
•
design easy
device
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
MIL-STD-19500 /228
.063(1.60)
.047(1.20)
•
•
•
•
Low power loss, high efficiency.
Pb-Free package is available
•
High current capability, low forward voltage drop.
•
product
capability.
RoHS
High surge
for packing code suffix ”G”
•
Guardring for overvoltage protection.
Halogen free product for packing code suffix “H”
•
meets UL 94 V-0 flammability rating
Epoxy
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
Moisure Sensitivity Level 1
•
bias resistors enable the configuration of
of
Built-in
Lead-free parts meet environmental standards
an inverter circuit
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOT-23
.122(3.10)
.106(2.70)
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
Absolute maximum ratings @ 25
.080(2.04)
.070(1.78)
.006(0.15)MIN.
For capacitive load, derate current by 20%
Electrical Characteristics @ 25
RATINGS
---
250
R
ΘJA
---
MHz
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
C
J
T
J
TSTG
-55 to +125
40
.020(0.50)
.012(0.30)
120
-55 to +150
Dimensions
+175
in inches and (millimeters)
-
65
to
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
Suggested Solder
V
F
*Marking: 16
I
R
.035
.900
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
Pad Layout
.055(1.40)
.035(0.89)
Symbol
Code
Parameter
Marking
V
I(off)
Input voltage (V
CC
=-5V, I
O
=-100A)
Maximum Recurrent Peak Reverse Voltage
V
I(on)
(V
O
=-0.3V, I
O
=-2mA)
Maximum RMS Voltage
=
I
-10mA/-0.5mA
V
O(on)
Output voltage (I
O
/I
I
I
=
I
-5V)
Input current (V
Maximum DC Blocking Voltage
I
O(off)
Output current (V
CC
=
I
0)
=-50V, V
Maximum Average Forward Rectified Current
G
I
DC current gain (V
O
=-5V, I
O
-5mA)
=
R
1
Input resistance
Peak Forward Surge Current 8.3 ms single half sine-wave
R
2
/R
1
Resistance ratio
superimposed on rated load (JEDEC method)
Transition frequency
f
T
(V
O
=-10V, I
O
=5mA, f=100MHz)
Typical Thermal Resistance (Note 2)
Min
-0.5
V
RRM
---
V
---
RMS
---
DC
V
---
I
O
68
32.9
I
FSM
0.8
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Typ
12
---
20
---
---
14
---
20
---
---
47
1.0
Max
13
---
30
-3.0
-0.3
21
-0.18
30
-0.5
---
61.1
1.2
Unit
V
V
V
mA
A
K¡
14
40
28
40
15
50
35
50
16
60
42
60
18
.008(0.20)
10
80
.003(0.08)
100
56
70
80
100
.083(2.10)
.110(2.80)
Dimensions in inches and (millimeters)
Symbol
•
Polarity : Indicated by cathode band
Parameter
Min
Typ
Max
Unit
V
CC
Supply voltage
---
-50
---
V
•
Mounting Position : Any
V
IN
Input voltage
-40
---
10
V
•
Weight : Approximated 0.011 gram
-30
I
O
Output current
---
---
mA
I
C(MAX)
-100
P
d
Power
MAXIMUM RATINGS AND ELECTRICAL
---
dissipation
---
200
mW
CHARACTERISTICS
T
j
Junction temperature
---
150
---
Ratings at 25℃ ambient temperature unless otherwise specified.
T
stg
Storage temperature
-55
---
150
Single phase half wave, 60Hz, resistive of inductive load.
115
150
105
150
120
200
140
200
.004(0.10)MAX.
1.0
30
0.50
0.70
Maximum Average Reverse Current at @T A=25℃
.031
.800
0.5
0.85
0.9
0.92
@T A=125℃
10
.079
2.000
inches
mm
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
.037
.950
.037
.950
2012-06
WILLAS ELECTRONIC CORP
2012-
0
WILLAS ELECTRONIC CORP.
FM120-M
DTA144ECA
THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
SOD-123H
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC COR
2012-
0
WILLAS ELECTRONIC CORP.
Embedded System
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