FM120-M
DTC114TE
THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
SOD-123H
Features
•
•
•
isolation
Mechanical data
of the input. They also have the
to allow negative biasing
advantage of almost completely eliminating parasitic effects
•
Epoxy : UL94-V0 rated flame retardant
Only the on/off conditions need to be set for operation, making
•
Case : Molded plastic, SOD-123H
device design easy
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
.035(0.90)
.028(0.70)
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
Pb-Free package is
capability, low forward voltage drop.
•
High current
available
•
High surge capability.
RoHS product for packing code suffix ”G”
•
Guardring for
Halogen free product
overvoltage protection.
for packing code suffix “H”
•
Ultra high-speed switching.
Epoxy meets UL 94 V-0
planar chip, metal silicon junction.
flammability rating
•
Silicon epitaxial
Moisure
•
Sensitivity
parts meet environmental standards of
Level 1
Lead-free
Built-in bias resistors enable the configuration of an inverter circuit
MIL-STD-19500 /228
without connecting external input resistors (see equivalent circuit)
•
RoHS product for packing code suffix "G"
The bias resistors consist of
for packing
resistors with complete
Halogen free product
thin-film
code suffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOT-523
0.071(1.8)
0.056(1.4)
.067(1.70)
.059(1.50)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
Absolute Maximum Ratings
: Any
•
Mounting Position
•
Weight :
0.011 gram
Parameter
Approximated
Symbol
Value
Unit
V
.014(0.35)
Dimensions in inches and (millimeters)
.010(0.25)
.043(1.10)
.035(0.90)
.004(0.10)MIN.
Collector
For capacitive load, derate current by
P
C
Dissipation
20%
150
mW
Junction Temperature
RATINGS
T
J
150
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
-55~150
V
RRM
Storage
Marking Code
Range
Temperature
T
STG
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
.069(1.75)
.057(1.45)
Collector-Base Voltage
V
CBO
50
MAXIMUM RATINGS AND ELECTRICAL
Collector-Emitter Voltage
V
CEO
50
Ratings at 25℃ ambient temperature
EBO
Emitter-Base voltage
V
unless otherwise specified.
5
Collector
Single phase half wave, 60Hz, resistive of inductive load.
Current-Continuous
I
C
100
CHARACTERISTICS
V
V
mA
10
100
70
100
115
150
105
150
120
200
140
200
V
RMS
V
DC
I
O
I
FSM
Typ
Electrical Characteristics
8.3 ms single half sine-wave
Peak Forward Surge Current
Sym
superimposed on rated load (JEDEC method)
.008(0.20)
.004(0.10)
Parameter
Min
Max
Unit
*Marking: 04
Collector-Base Breakdown Voltage
V
50
R
ΘJA
---
---
V
(BR)CBO
40
Typical Thermal
I
Resistance (Note 2)
(I
C
=50uA,
E
=0)
120
Typical Junction Capacitance (Note
Voltage
C
J
Collector-Emitter Breakdown
1)
.004(0.10)MAX.
50
---
---
V
V
(BR)CEO
(I
C
=1mA, I
B
=0)
Range
-55 to +125
-55 to +150
Operating Temperature
T
J
Emitter-Base Breakdown Voltage
-
65
to +175
5
---
---
V
V
(BR)EBO
Storage Temperature Range
TSTG
(I
E
=50uA, I
C
=0)
Collector Cut-off Current
---
---
0.5
uA
I
CBO
.014(0.35)
(V
CB
=50V, I
E
=0)
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
.006(0.15)
Emitter Cut-off Current
0.9
0.92
V
F
---
0.70
0.85
I
EBO
Maximum Forward Voltage at 1.0A DC
---
0.5
uA
0.50
(V
EB
=4V, I
C
=0)
0.5
Maximum
Current Gain
DC
Average Reverse Current at @T A=25℃
I
R
300
100
600
---
h
FE
10
@T A=125℃
Rated
(V
CE
=5V, I
C
=1mA)
DC Blocking Voltage
Dimensions in inches and (millimeters)
Collector-Emitter Saturation Voltage
---
---
0.3
V
V
CE(sat)
(I
NOTES:
C
=10mA, I
B
=1mA)
R
1
1- Measured
Resistor
and applied reverse voltage of 4.0 VDC.
10
Input
at 1 MHZ
7
13
K
Transition Frequency
---
250
---
MHz
f
T
2- Thermal Resistance From Junction to Ambient
(V
CE
=10V, I
E
=-5mA, f=100MHz)
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
.035(0.90)
.028(0.70)
FM120-M
DTC114TE
THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
SOD-123H
WILLAS
PACKAGE
Pb Free Produ
Features
Package outline
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
MCU
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