FM120-M
DTC114YE
THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
design,
•
Batch
Features
process leakage excellent power dissipation offers
better reverse
current and thermal resistance.
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
•
.035(0.90)
.028(0.70)
•
•
•
•
•
Pb-Free package is available
•
Low profile surface mounted application in order to
RoHS product
board space.
code suffix ”G”
optimize
for packing
•
Low power loss,
for
efficiency.
Halogen free product
high
packing code suffix “H”
•
High current capability, low forward voltage
Epoxy meets UL 94 V-0 flammability rating
drop.
•
High surge capability.
Moisure Sensitivity Level 1
•
bias resistors enable the configuration of an inverter circuit
Built-in
Guardring for overvoltage protection.
•
connecting external input
without
Ultra high-speed switching.
resistors
•
Silicon epitaxial planar
thin-film resistors with complete
The bias resistors consist of
chip, metal silicon junction.
•
Lead-free
negative
environmental
input. They
isolation to allow
parts meet
biasing of the
standards of
also have the
MIL-STD-19500 /228
advantage of
product for packing code suffix "G"
parasitic effects.
•
RoHS
almost completely eliminating
Only the on/off
free product for packing
be set for
"H"
Halogen
conditions need to
code suffix
operation, making
device design easy
Mechanical data
SOT-523
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOD-123H
.067(1.70)
.059(1.50)
0.071(1.8)
0.056(1.4)
ina
ry
Min
---
-6
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
Absolute maximum ratings @ 25
solderable per MIL-STD-750 ,
•
Terminals :Plated terminals,
Symbol
V
CC
V
IN
I
O
I
C(MAX)
P
d
T
j
T
stg
.014(0.35)
.010(0.25)
0.040(1.0)
.043(1.10)
.035(0.90)
0.031(0.8) Typ.
0.024(0.6)
0.031(0.8) Typ.
•
•
•
Weight
dissipation
Power
: Approximated 0.011 gram
Junction temperature
MAXIMUM
Storage temperature
RATINGS
.004(0.10)MIN.
Electrical Characteristics @ 25
Marking Code
Pr
el
RATINGS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
im
AND
.008(0.20)
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
12
13
Maximum Recurrent Peak Reverse Voltage
V
Symbol
Parameter
Min
RRM
Typ
20
Max
30
Unit
0.3
RMS
---
14
---
V
I(off)
21
V
Maximum
Input
Voltage
(V
CC
=5V, I
O
=100A)
RMS
voltage
V
---
V
V
I(on)
---
(V
O
=0.3V, I
O
=1mA)
1.4
Maximum DC Blocking Voltage
V
DC
0.1
20
0.3
30
V
V
O(on)
=
---
Output voltage (I
O
/I
I
5mA/0.25mA)
I
I
=
Rectified Current
---
I
O
---
0.88
mA
Maximum
Input current (V
I
5V)
Average Forward
I
A
Output current (V
CC
=50V, V
I
0)
=
---
---
0.5
O(off)
Peak Forward Surge Current
(V
O
=5V, I
O
5mA)
single
G
I
DC current gain
8.3 ms
=
half sine-wave
68
I
FSM
---
---
R
1
Input
rated load
7.0
10
superimposed on
resistance
(JEDEC method)
K¡
13
R
2
/R
1
Thermal Resistance (Note 2)
Resistance ratio
3.7
ΘJA
4.7
5.7
Typical
R
Transition frequency
MHz
f
T
---
C
J
250
---
Typical Junction Capacitance
f=100MHz)
(V
O
=10V, I
O
=5mA,
(Note 1)
-55 to +125
Operating Temperature Range
T
J
Storage Temperature Range
TSTG
.004(0.10)
10
18
80
56
80
.069(1.75)
.057(1.45)
Parameter
Method 2026
Supply voltage
Polarity : Indicated by cathode band
Input voltage
Mounting Position : Any
Output current
Typ
Max
Unit
50
---
V
Dimensions in inches and (millimeters)
---
40
V
70
---
---
mA
100
---
150
---
mW
---
150
---
ELECTRICAL CHARACTERISTICS
-55
---
150
100
70
100
115
150
105
150
120
200
140
200
.004(0.10)MAX.
.014(0.35)
.035(0.90)
.028(0.70)
0.9
40
.006(0.15)
120
-55 to +150
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
*Marking:
@T A=125℃
64
Dimensions in inches and (millimeters)
0.50
0.70
0.5
10
0.85
0.92
-
65
to +175
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
京公网安备 11010802033920号
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