FM120-M
DTC114YUA
THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch
Features
process design, excellent power dissipation offers
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
SOD-123H
SOT-323
0.146(3.7)
0.130(3.3)
•
•
•
•
•
•
Pb-Free package is available
•
Low profile surface mounted application in order to
RoHS
optimize board space.
code suffix ”G”
product for packing
•
Low power loss, high efficiency.
code suffix “H”
Halogen free product for packing
•
meets UL
capability, low forward voltage
Epoxy
High current
94 V-0 flammability rating
drop.
•
High surge capability.
Moisure Sensitivity Level 1
•
Guardring for overvoltage protection.
Built-in bias resistors enable the configuration of an inverter circuit
•
Ultra high-speed switching.
without connecting external input resistors
•
Silicon epitaxial planar chip, metal silicon junction.
The bias resistors consist of thin-film resistors with complete
•
Lead-free parts meet environmental standards of
isolation to allow negative biasing of the input. They also have the
MIL-STD-19500 /228
advantage of almost completely eliminating parasitic effects.
RoHS product for packing code suffix "G"
•
Only the on/off conditions need to
code suffix "H"
Halogen free product for packing
be set for operation, making
device design easy
data
Mechanical
better reverse leakage current and thermal resistance.
.004(0.10)MIN.
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
.010(0.25)
.003(0.08)
0.040(1.0)
0.024(0.6)
ry
0.031(0.8) Typ.
I
C(MAX)
P
d
T
j
T
stg
•
Output current
•
Mounting Position : Any
Power dissipation
•
Weight : Approximated 0.011 gram
Junction temperature
Storage temperature
---
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
Electrical Characteristics @ 25
20%
For capacitive load, derate current by
Symbol
Parameter
RATINGS
V
I(off)
Input voltage (V
CC
=5V, I
O
=100A)
Marking Code
V
I(on)
(V
O
=0.3V, I
O
=1mA)
Maximum Recurrent Peak Reverse Voltage
V
O(on)
Output voltage (I
O
/I
I
5mA/0.25mA)
=
Maximum RMS Voltage
(V
I
5V)
I
I
=
Input current
I
O(off)
Output current (V
CC
=50V, V
I
0)
=
Maximum DC Blocking Voltage
G
I
DC current gain (V
O
=5V, I
O
5mA)
=
Maximum Average Forward Rectified Current
R
1
Input resistance
R
2
/R
Resistance ratio
Peak
1
Forward Surge Current 8.3 ms single half sine-wave
Transition frequency
f
T
superimposed
O
=10V,
load (JEDEC method)
(V
on rated
I
O
=5mA, f=100MHz)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
im
R
ΘJA
C
J
T
J
TSTG
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
---
---
-55
ina
---
mA
---
---
150
mW
V
CC
V
IN
I
O
Method 2026
Supply voltage
Input voltage
Polarity : Indicated by cathode band
---
-6
50
---
70
100
200
150
---
---
40
Dimensions in inches and (millimeters)
.056(1.40)
.047(1.20)
Min
Typ
Max
Unit
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
---
12
---
13
V
0.3
14
15
16
18
10
115
120
---
---
1.4
V
.004(0.10)MAX.
20
30
40
50
60
80
100
150
200
V
RRM
---
0.1
0.3
V
35
42
56
70
105
140
V
---
RMS
---
14
0.88
21
mA
28
---
DC
---
20
0.5
30
A
40
50
60
80
100
150
200
V
.016(0.40)
68
---
---
1.0
13
.008(0.20)
K
¡
7.0
I
O
10
3.7
4.7
5.7
30
I
FSM
---
250
---
MHz
Pr
el
CHARACTERISTICS
.054(1.35)
.045(1.15)
•
Epoxy : UL94-V0 rated flame retardant
•
maximum ratings @ 25
Absolute
Case : Molded plastic, SOD-123H
,
per
Symbol
•
Terminals :Plated terminals, solderable
Min
MIL-STD-750
Parameter
Typ
Max
.096(2.45)
.078(2.00)
.087(2.20)
.070(1.80)
0.031(0.8) Typ.
Unit
V
V
Dimensions in inches and (millimeters)
40
120
-55 to +125
-55 to +150
-
65
to +175
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
Suggested Solder
Pad Layout
0.70
.043(1.10)
.032(0.80)
V
F
*Marking: 64
@T A=125℃
0.50
0.70
0.90
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
I
R
0.5
10
1.90
mm
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.65
0.65
2012-06
WILLAS ELECTRONIC CORP
2012-
0
WILLAS ELECTRONIC CORP.
Embedded System
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