FM120-M
DTC124EUA
THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
.004(0.10)MIN.
better reverse leakage current and thermal resistance.
Features
profile surface mounted application in order to
•
Low
Method 2026
Symbol
Parameter
Min
Typ
Max
Unit
Dimensions in inches and (millimeters)
V
CC
Supply
: Indicated by cathode band
---
50
---
V
•
Polarity
voltage
V
IN
Input voltage
-10
---
40
V
•
Mounting Position : Any
I
O
30
Output current
---
---
mA
I
C(MAX)
•
Weight : Approximated 0.011 gram
100
P
d
Power dissipation
---
200
---
mW
T
j
Junction temperature
---
150
MAXIMUM RATINGS AND ELECTRICAL
---
CHARACTERISTICS
T
stg
Storage temperature
-55
---
150
Ratings at 25℃ ambient temperature unless otherwise specified.
.056(1.40)
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Electrical Characteristics @ 25
.047(1.20)
Min
0.5
V
RRM
---
---
V
RMS
---
V
DC
---
56
I
O
15.4
0.8
I
FSM
Typ
Max
Unit
12
---
13
---
V
---
20
3.0
30
V
0.1
14
0.3
21
V
---
0.36
mA
20
30
A
---
0.5
---
---
22
K¡
28.6
1.0
1.2
---
RATINGS
Symbol
Parameter
Marking Code
V
I(off)
Input voltage (V
CC
=5V, I
O
=100A)
Maximum Recurrent Peak
(V =0.2V,
Voltage
Reverse
I =5mA)
V
I(on)
O
O
V
O(on)
Output voltage (I
O
/I
I
10mA/0.5mA)
=
Maximum RMS Voltage
I
I
=
I
5V)
Input current (V
Maximum DC Blocking Voltage
I
O(off)
Output current (V
CC
=50V, V
I
0)
=
Maximum Average Forward Rectified
I
O
5mA)
G
I
DC current gain (V
O
=5V,
Current
=
R
1
Input resistance
Peak Forward Surge Current 8.3 ms single half sine-wave
R
2
/R
1
Resistance ratio
superimposed on rated load (JEDEC method)
Transition frequency
f
T
(V
O
Resistance (Note 2)
Typical Thermal
=10V, I
O
=5mA, f=100MHz)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
14
40
28
40
15
50
50
16
60
35
.004(0.10)MAX.
42
60
1.0
30
.054(1.35)
.045(1.15)
Pb-Free package is available
optimize board space.
•
product for packing code suffix ”G”
RoHS
Low power loss, high efficiency.
•
High current capability, low forward voltage
“H”
Halogen free product for packing code suffix
drop.
•
High surge capability.
•
Epoxy meets UL 94 V-0 flammability rating
•
Guardring for overvoltage protection.
•
Moisure Sensitivity Level 1
•
Ultra high-speed switching.
•
Built-in bias resistors enable the configuration of an inverter circuit
•
Silicon epitaxial planar chip, metal silicon junction.
without connecting external input resistors
•
Lead-free parts meet environmental standards of
•
The bias resistors consist of thin-film resistors with complete
MIL-STD-19500 /228
isolation to allow negative biasing
suffix "G"
input. They also have the
•
RoHS product for packing code
of the
advantage of almost completely eliminating
"H"
Halogen free product for packing code suffix
parasitic effects.
•
Only the on/off conditions need to be set for operation, making
Mechanical data
device design easy
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
maximum ratings @ 25
Absolute
Terminals :Plated terminals, solderable per MIL-STD-750
•
SOT-323
0.012(0.3) Typ.
.010(0.25)
.003(0.08)
0.031(0.8) Typ.
.087(2.20)
.070(1.80)
18
80
56
80
10
100
70
100
.096(2.45)
.078(2.00)
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
115
150
105
150
120
200
140
200
.043(1.10)
.032(0.80)
.016(0.40)
.008(0.20)
---
250
R
ΘJA
MHz
C
J
T
J
TSTG
-55 to +125
40
Dimensions in inches and (millimeters)
120
-
65
to +175
-55 to +150
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
*Marking:
Rated DC Blocking Voltage
Suggested Solder
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
Pad Layout
25
V
F
I
R
0.50
0.70
0.70
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
0.5
0.90
10
1.90
mm
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.65
0.65
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
FM120-M
DTC124EUA
THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
•
Low profile surface mounted application in order to
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
10
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
3
T =25
℃
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
T =100
℃
a
WILLAS
ON Characteristics
O
PACKAGE
OFF Characteristics
Features
Typical Characteristics
outline
Package
10
Pb Free Produc
100
better reverse leakage current and thermal resistance.
V =0.2V
SOD-123H
3
30
optimize board space.
(mA)
(V)
0.146(3.7)
0.130(3.3)
V
I(ON)
1
T
a
=100
℃
0.012(0.3) Typ.
INPUT VOLTAGE
I
0
OUTPUT CURRENT
0.3
0.071(1.8)
0.056(1.4)
1
•
0.3
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
a
T
a
=25
℃
0.1
Mechanical data
0.03
0.040(1.0)
0.024(0.6)
V =5V
CC
•
Epoxy : UL94-V0 rated flame retardant
0.1
0.3
0.1
Case : Molded plastic, SOD-123H
1
10
100
30
3
•
,
OUTPUT CURRENT I
(mA)
•
Terminals :Plated terminals, solderable per MIL-STD-750
O
0.01
0.4
0.8
0.031(0.8) Typ.
1.2
1.6
INPUT VOLTAGE
V
I(OFF)
(V)
2.0
0.031(0.8) Typ.
Method 2026
•
Polarity : Indicated by cathode band
V
O(ON)
—— I
O
1000
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
(mV)
300
Dimensions in inches and (millimeters)
I
O
/I
I
=20
1000
G
I
——
I
O
V
O
=5V
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
G
I
100
300
OUTPUT VOLTAGE
100
RATINGS
T
a
=100
℃
T
a
=25
℃
30
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
30
Maximum DC Blocking Voltage
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
100
12
20
14
20
DC CURRENT GAIN
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
V
O(ON)
T
a
=100
℃
T
a
=25
℃
13
30
21
30
10
14
40
28
40
15
50
35
50
16
60
42
60
1.0
3
30
40
120
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
3
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
1
10
30
3
OUTPUT CURRENT
superimposed on rated load (JEDEC method)
I
O
(mA)
10
1
0.1
5
10
30
100
0.3
1
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
C
O
10
Storage Temperature Range
OUTPUT CURRENT
I
O
(mA)
-55 to +125
400
T
a
——
V
R
T
J
TSTG
f=1MHz
T
a
=25
℃
P
D
——
-55 to +150
-
65
to +175
CHARACTERISTICS
(pF)
8
Maximum Forward Voltage at 1.0A DC
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
(mW)
350
V
F
@T A=125℃
C
O
Maximum Average Reverse Current at @T A=25℃
300
0.50
0.70
0.5
10
0.85
0.9
0.92
OUTPUT CAPACITANCE
Rated DC Blocking Voltage
6
P
D
POWER DISSIPATION
I
R
250
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
4
200
DTC124EUA
150
100
2
50
0
0
4
8
12
16
20
0
0
25
50
75
100
a
125
150
2012-06
REVERSE BIAS VOLTAGE
V
R
(V)
AMBIENT TEMPERATURE
2012-
0
WILLAS ELECTRONIC CORP.
T ( )
WILLAS
℃
ELECTRONIC CORP
京公网安备 11010802033920号
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