FM120-M
DTC144TE
THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
Pb-Free package is available
•
Guardring for overvoltage protection.
RoHS product for packing code suffix ”G”
•
Ultra high-speed switching.
•
free product for packing
metal
suffix “H”
Halogen
Silicon epitaxial planar chip,
code
silicon junction.
•
Lead-free parts meet environmental standards of
Epoxy meets UL 94 V-0 flammability rating
MIL-STD-19500 /228
Moisure
RoHS product
Level 1
code suffix "G"
•
Sensitivity
for packing
Built-in bias resistors enable the configuration
"H"
an inverter
Halogen free product for packing code suffix
of
SOD-123H
WILLAS
PACKAGE
Pb Free Produ
Features
Package outline
SOT-523
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
•
Features
•
•
circuit
without
Mechanical data
resistors (see equivalent circuit)
connecting external input
The bias resistors consist of thin-film resistors with complete
•
to allow negative biasing
retardant
isolation
Epoxy : UL94-V0 rated flame
of the input. They also have the
•
Case : Molded plastic, SOD-123H
advantage of almost completely eliminating parasitic effects
,
Only the
Terminals :Plated terminals,
be set for operation, making
•
on/off conditions need to
solderable per MIL-STD-750
device design easy
Method 2026
.035(0.90)
.028(0.70)
.067(1.70)
0.056(1.4)
.059(1.50)
0.071(1.8)
0.040(1.0)
0.024(0.6)
.014(0.35)
.010(0.25)
0.031(0.8) Typ.
0.031(0.8) Typ.
.043(1.10)
.035(0.90)
.004(0.10)MIN.
16
60
60
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Collector-Base Voltage
V
CBO
50
V
Ratings at 25℃ ambient temperature unless otherwise specified.
Collector-Emitter Voltage
V
CEO
50
V
Single phase half wave, 60Hz, resistive of inductive load.
Emitter-Base voltage
V
EBO
5
V
For capacitive load, derate current by 20%
Collector Current-Continuous
I
C
100
mA
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
RATINGS
Collector Dissipation
P
C
150
mW
Marking Code
Junction Temperature
T
J
Maximum Recurrent Peak Reverse Voltage
Storage Temperature Range
T
STG
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
V
RRM
-55~150
V
RMS
V
DC
I
O
I
FSM
150
12
20
14
13
30
21
14
40
28
40
15
50
35
50
42
.008(0.20)
80
.004(0.10)
56
80
18
.069(1.75)
.057(1.45)
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
10
100
70
115
150
105
150
120
200
140
20
30
100
200
Electrical
Forward Surge Current 8.3 ms single half sine-wave
Peak
Characteristics
Sym
Parameter
superimposed on rated load (JEDEC method)
Min
Typ
Max
Unit
1.0
.004(0.10)MAX.
30
.035(0.90)
.028(0.70)
*Marking: 06
Collector-Base Breakdown Voltage
V
50
R
ΘJA
---
---
V
(BR)CBO
40
Typical Thermal Resistance (Note 2)
(I
C
=50uA, I
E
=0)
120
.014(0.35)
Typical Junction Capacitance (Note 1)
Voltage
C
J
Collector-Emitter Breakdown
50
---
---
V
V
(BR)CEO
-55 to +125
(I
C
Temperature
-55
Operating
=1mA, I
B
=0)
Range
T
J
.006(0.15)
to +150
Emitter-Base Breakdown Voltage
-
65
to +175
Storage Temperature Range
5
TSTG
---
---
V
V
(BR)EBO
(I
E
=50uA, I
C
=0)
Collector Cut-off Current
---
---
0.5
uA
I
CBO
CHARACTERISTICS
(V
CB
=50V, I
E
=0)
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
Dimensions in inches and (millimeters)
Emitter Cut-off Current
0.9
Maximum Forward Voltage at 1.0A DC
0.92
V
F
---
0.50
0.70
0.85
I
EBO
---
0.5
uA
(V
EB
=4V, I
C
=0)
0.5
Maximum Average Reverse Current at @T A=25℃
DC Current Gain
I
R
300
100
600
---
h
FE
10
@T A=125℃
Rated DC
CE
=5V, I
C
=1mA)
(V
Blocking Voltage
Collector-Emitter Saturation Voltage
---
---
0.3
V
V
CE(sat)
NOTES:
(I
C
=5mA, I
B
=0.5 mA)
K¡
R
1- Measured at
resistance
applied reverse voltage of 4.0 VDC.
Input
1 MHZ and
32.9
47
61.1
1
Transition Frequency
2-
---
250
---
MHz
f
T
Thermal Resistance From Junction to Ambient
(V
CE
=10V, I
E
=-5mA, f=100MHz)
2012-06
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
FM120-M
DTC144TE
THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
Static Characteristic
•
High surge capability.
•
Guardring for overvoltage protection.
COMMON
EMITTER
•
Ultra high-speed switching.
10uA
T
a
=25
℃
•
Silicon epitaxial planar chip, metal silicon junction.
9uA
•
Lead-free parts meet environmental standards of
8uA
MIL-STD-19500 /228
suffix
•
RoHS product for packing code
7uA
"G"
Halogen free product for packing code suffix "H"
6uA
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
Typical Characteristics
1000
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
5
h
FE
——
I
C
0.071(1.8)
0.056(1.4)
T
a
=100
℃
(mA)
4
h
FE
I
C
T
a
=25
℃
COLLECTOR CURRENT
3
DC CURRENT GAIN
Mechanical data
2
100
0.040(1.0)
0.024(0.6)
5uA
1
•
Epoxy : UL94-V0 rated flame retardant
4uA
3uA
•
Case : Molded plastic, SOD-123H
,
2uA
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
I
B
=1uA
8
0
0.031(0.8) Typ.
0.031(0.8) Typ.
COMMON EMITTER
V
CE
= 5V
10
0.1
0
•
Polarity : Indicated by cathode band
2
4
6
COLLECTOR-EMITTER VOLTAGE V
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
CE
Dimensions in inches
10
(millimeters)
and
1
COLLECTOR CURRENT
I
C
(mA)
100
(V)
3000
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(mA)
V
CEsat
——
I
C
100
I
C
——
V
BE
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
I
C
COLLECTOR CURRENT
Ratings at 25℃ ambient temperature unless otherwise specified.
1000
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Maximum Recurrent Peak Reverse Voltage
100
V
RRM
V
RMS
V
DC
I
O
β=10
I
FSM
100
Maximum RMS Voltage
Maximum DC Blocking Voltage
T
a
=100
℃
Maximum Average Forward Rectified Current
T
a
=25
℃
14
20
21
1
30
28
40
35
50
T =2
5
℃
a
Marking Code
12
20
13
30
14
40
T =1
00
℃
a
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
10
15
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Peak Forward Surge Current 8.3 ms single half sine-wave
0.1
superimposed on rated load
1
(JEDEC method)
10
10
COMMON EMITTER
V
CE
=5V
10
100
0.1
0.1
1
Typical Thermal Resistance (Note 2)
COLLECTOR CURREMT
I
C
(mA)
R
ΘJA
C
J
T
J
f=1MHz
TSTG
I
E
=0
T
a
=25
℃
BASE-EMMITER VOLTAGE V
BE
(V)
Typical Junction Capacitance (Note 1)
C
ob
—— V
CB
Operating Temperature Range
10
Storage Temperature Range
-55 to +125
350
300
P
D
40
120
—— T
a
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
CAPACITANCE
(pF)
POWER DISSIPATION
P
D
(mW)
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T A=125℃
250
0.50
0.70
0.5
10
0.85
0.9
0.92
Rated DC Blocking Voltage
1
Maximum Average Reverse Current at @T A=25℃
C
C
ob
I
R
200
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
150
DTC144TE
100
50
0.1
0
10
20
30
40
0
0
25
50
75
100
125
150
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
京公网安备 11010802033920号
EEWORLD
