FM120-M
DTC144TUA
THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
Pb-Free
High surge capability.
package is available
•
Guardring for overvoltage protection.
RoHS product for packing code suffix ”G”
•
Ultra high-speed switching.
•
free
epitaxial
for packing code suffix “H”
Halogen
Silicon
product
planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
Epoxy meets UL 94 V-0 flammability rating
MIL-STD-19500 /228
Moisure
•
Sensitivity Level 1
RoHS product for packing code suffix "G"
Built-in bias resistors
product for packing code suffix
of an inverter
Halogen free
enable the configuration
"H"
SOD-123H
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
Features
•
SOT-323
.004(0.10)MIN.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
•
•
circuit
without connecting external input resistors (see equivalent circuit)
Mechanical data
The bias resistors consist of thin-film resistors with complete
Epoxy :
negative biasing of the input.
isolation
•
to allow
UL94-V0 rated flame retardant
They also have the
advantage of almost completely eliminating parasitic effects
•
Case : Molded plastic, SOD-123H
Only the
•
on/off conditions
terminals, solderable per MIL-STD-750 ,
Terminals :Plated
need to be set for operation, making
device design easy
Method 2026
.096(2.45)
.078(2.00)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
.010(0.25)
.003(0.08)
0.031(0.8) Typ.
Value
Unit
Electrical Characteristics
Maximum RMS Voltage
Sym
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
V
CEO
50
V
Emitter-Base voltage
V
EBO
5
V
Ratings at 25℃ ambient temperature unless otherwise specified.
Collector Current-Continuous
I
C
100
mA
Single phase half wave, 60Hz, resistive of inductive load.
Collector Dissipation
P
C
200
mW
For capacitive load, derate current by 20%
Junction Temperature
T
J
150
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
Storage Temperature Range
T
STG
-55~150
.056(1.40)
Marking Code
12
13
14
15
16
18
10
115
120
.047(1.20)
80
20
30
40
50
60
100
150
200
Maximum Recurrent Peak Reverse Voltage
V
RRM
40
50
60
80
100
150
200
Collector-Base Breakdown Voltage
50
---
---
V
V
(BR)CBO
Maximum Average Forward Rectified Current
I
O
1.0
(I
C
=50uA, I
E
=0)
.004(0.10)MAX.
Collector-Emitter Breakdown Voltage
50
---
---
V
V
(BR)CEO
Peak
(I
C
=1mA, I
B
=0)
Forward Surge Current 8.3 ms single half sine-wave
30
I
FSM
Emitter-Base Breakdown Voltage
superimposed on rated load (JEDEC method)
5
---
---
V
V
(BR)EBO
(I
E
=50uA, I
C
=0)
40
Typical Thermal Resistance (Note 2)
R
ΘJA
Collector Cut-off Current
.016(0.40)
---
0.5
I
CBO
Typical Junction Capacitance (Note 1)
uA
120
C
J
---
(V
CB
=50V, I
E
=0)
.008(0.20)
-55 to +125
-55 to +150
Emitter Cut-off Current
Operating Temperature Range
T
J
---
I
EBO
---
0.5
uA
(V =4V, I
C
=0)
-
65
to +175
Storage
EB
Temperature Range
TSTG
Dimensions in inches and (millimeters)
DC Current Gain
100
300
600
---
h
FE
(V
CE
=5V, I
C
=1mA)
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
Collector-Emitter Saturation Voltage
---
---
0.3
V
V
CE(sat)
Suggested Solder
(I
C
=5 mA, I
B
=
Voltage
0.9
Maximum Forward
0.5
mA)
at 1.0A DC
0.92
V
F
0.50
0.70
0.85
Pad Layout
K¡
R
1
Input resistance
32.9
47
61.1
0.5
Maximum Average Reverse Current at @T A=25℃
I
R
0.70
Transition Frequency
---
250
---
MHz
f
T
Rated DC Blocking Voltage
10
(V
CE
=10V, I
E
=-5mA, f=100MHz)
@T A=125℃
Parameter
Maximum DC Blocking Voltage
Min
V
DC
Typ
V
RMS
14
Max
20
21
Unit
30
28
35
42
.054(1.35)
.045(1.15)
•
Polarity : Indicated by cathode band
Absolute Maximum Ratings
: Any
•
Mounting Position
Parameter
•
Weight : Approximated
Symbol
0.011 gram
Dimensions in inches and (millimeters)
.087(2.20)
.070(1.80)
56
70
105
140
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.90
1.90
mm
*Marking: 06
0.65
0.65
2012-06
WILLAS ELECTRONIC COR
2012-
0
WILLAS ELECTRONIC CORP.
.043(1.10)
.032(0.80)
FM120-M
DTC144TUA
THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
Static Characteristic
5
•
High current capability, low forward voltage drop.
COMMON
•
High surge capability.
EMITTER
10uA
T
a
=25
℃
•
Guardring for overvoltage protection.
4
9uA
•
Ultra high-speed switching.
8uA
•
Silicon epitaxial planar chip, metal silicon junction.
7uA
3
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
6uA
•
RoHS product for packing code suffix "G"
5uA
2
Halogen free product for packing code suffix "H"
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
Typical Characteristics
1000
SOD-123H
h
FE
——
I
C
0.130(3.3)
0.146(3.7)
0.012(0.3) Typ.
T
a
=100
℃
(mA)
h
FE
I
C
T
a
=25
℃
0.071(1.8)
0.056(1.4)
COLLECTOR CURRENT
DC CURRENT GAIN
100
Mechanical data
1
4uA
3uA
•
Epoxy : UL94-V0 rated flame retardant
2uA
•
Case : Molded plastic, SOD-123H
I =1uA
,
0
•
Terminals :Plated terminals, solderable per MIL-STD-750
B
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
COMMON EMITTER
0.031(0.8) Typ.
V
CE
= 5V
1
10
100
0
Method 2026
COLLECTOR-EMITTER VOLTAGE
2
4
6
8
10
0.1
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
V
CEsat
——
I
C
3000
•
Weight : Approximated 0.011 gram
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
1000
Dimensions in inches and (millimeters)
100
I
C
——
V
BE
T =1
00
℃
a
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
100
Marking Code
Maximum Recurrent Peak Reverse Voltage
T
a
=100
℃
T
a
=25
℃
V
RRM
V
RMS
V
DC
I
O
10
12
20
14
20
100
13
30
21
30
1
14
40
28
40
15
50
35
50
1
T =2
5
℃
a
COLLECTOR CURRENT
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
I
C
(mA)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
10
16
60
42
60
18
80
56
V
CE
=5V
10
10
100
70
115
150
105
150
100
120
200
140
200
Maximum RMS Voltage
Maximum DC Blocking Voltage
10
0.1
1
80
100
COMMON EMITTER
Maximum Average Forward Rectified Current
β=10
COLLECTOR CURREMT
sine-wave
Peak Forward Surge Current 8.3 ms single half
I
C
(mA)
superimposed on rated load (JEDEC method)
I
FSM
R
ΘJA
C
J
f=1MHz
=0
I
T
J
E
TSTG
0.1
0.1
1.0
BASE-EMMITER VOLTAGE
30
P
D
—— T
a
40
120
V
BE
(V)
C
ob
2)
Typical Thermal Resistance (Note
——
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
(pF)
10
V
CB
350
-55 to +150
-55 to +125
300
-
65
to +175
T
a
=25
℃
C
CHARACTERISTICS
C
ob
1
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
POWER DISSIPATION
P
D
(mW)
250
CAPACITANCE
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
V
F
@T A=125℃
200
0.50
DTC144TUA
0.70
0.5
10
0.85
0.9
0.92
I
R
150
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.1
0
10
20
30
40
100
50
0
0
25
50
75
100
125
150
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
Power technology
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