JMnic
Product Specification
Silicon PNP Power Transistors
2SA1757
DESCRIPTION
・With
TO-220Fa package
・Low
saturation voltage
・Wide
area of safe operation
APPLICATIONS
・For
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
C
=25℃
P
C
Collector power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
1
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-100
-60
-5
-5
-10
25
W
UNIT
V
V
V
A
A
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CEsat-1
V
CEsat-2
V
BEsat-1
V
BEsat-2
I
CBO
I
EBO
h
FE
C
ob
f
T
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=-1mA , I
B
=0
I
E
=-50μA , I
C
=0
I
C
=-3A, I
B
=-0.15A
I
C
=-4A, I
B
=-0.2A
I
C
=-3A, I
B
=-0.15A
I
C
=-4A, I
B
=-0.2A
V
CB
=-100V, I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-1A ; V
CE
=-2V
I
E
=0 ; V
CB
=-10V,f=1MHz
I
C
=-0.5A ; V
CE
=-10V
160
130
80
MIN
-60
-5
TYP.
2SA1757
MAX
UNIT
V
V
-0.3
-0.5
-1.2
-1.5
-10
-10
320
V
V
V
V
μA
μA
pF
MHz
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=-3A ; R
L
=10Ω
I
B1
=- I
B2
=-0.15A
V
CC
≈-30V
0.3
1.5
0.3
μs
μs
μs
2
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