1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
General Purpose Transistors
Features
WILLAS
FM120-M
8050xLT1
THRU
FM1200-M
Pb Free Product
Package outline
SOD-123H
NPN Silicon
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
FEATURE
capability.
•
High surge
High current capacity in compact package.
•
Guardring for overvoltage protection.
I
C
=
high-speed switching.
•
Ultra
0.8A.
Epitaxial planar type.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
NPN complement:
8050
MIL-STD-19500 /228
available
Pb-Free package is
•
RoHS product for packing code suffix "G"
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOT–23
COLLECTOR
3
0.040(1.0)
0.024(0.6)
Halogen free product for
Mechanical data
packing code suffix “H”
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
DEVICE MARKING AND ORDERING INFORMATION
0.031(0.8) Typ.
1
BASE
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
Device
Marking
•
Mounting Position : Any
8050PLT1
•
Weight : Approximated 0.011
80P
gram
Shipping
3000/Tape&Reel
2
EMITTER
Dimensions in inches and (millimeters)
3000/Tape&Reel
8050QLT1
1YC
Ratings at 25℃ ambient temperature unless otherwise specified.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
8050RLT1
1YE
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
MAXIMUM RATINGS
3000/Tape&Reel
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
V
RRM
V
RMS
V
DC
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
40
120
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
V
V
V
Rating
Maximum Average Forward Rectified Current
Collector-Emitter Voltage
Collector-Base Voltage
superimposed on rated load (JEDEC method)
Emitter-Base Voltage
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Storage Temperature Range
Peak Forward Surge Current 8.3 ms single half sine-wave
I
O
Symbol
V
CEO
I
FSM
V
CBO
R
ΘJA
C
J
T
J
TSTG
Max
25
40
5
800
Unit
V
V
V
mAdc
A
A
V
EBO
I
C
Collector Current-continuoun
-55 to +150
℃
Operating Temperature Range
THERMAL CHARACTERISTICS
-55 to +125
Unit
mW
0.70
mW/°C
°C/W
-
65
to +175
Characteristic
Symbol
Max
0.50
225
Total Device Dissipation FR-5 Board,(1)
CHARACTERISTICS
Maximum
T
A
=25°C
Voltage at 1.0A DC
Forward
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
P
D
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
V
F
0.85
0.5
10
0.9
0.92
V
Derate above 25°C
NOTES:
Thermal Resistance,Junction to Ambient
Total Device Dissipation
@T A=125℃
I
R
1.8
R
θ
J A
P
D
300
2.4
R
θ
J A
T
j,
T
S
t
g
417
-55 to +150
556
m
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal
Alumina Substrate,(2) TA=25°C
Resistance From Junction to Ambient
mW
mW/°C
°C/W
°C
Derate above 25°C
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature
2012-
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal
unless otherwise noted)
ELECTRICAL CHARACTERISTICS (T
A
=25°C
resistance.
General Purpose Transistors
Features
WILLAS
FM120-M
8050xLT1
THRU
FM1200-M
Pb Free Produc
Package outline
SOD-123H
•
Low profile surface mounted application in order to
•
Low power loss, high efficiency.
optimize board
Characteristic
space.
Symbol
Min
Typ
Max
OFF CHARACTERISTICS
low forward voltage drop.
•
High current capability,
High surge capability.
•
Collector-Emitter Breakdown Voltage
•
Guardring for overvoltage protection.
V
(BR)CEO
Ultra high-speed switching.
•
(I
C
=1.0mA)
•
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
•
Emitter-Base Breakdown Voltage
V
25
–
0.146(3.7)
0.130(3.3)
Unit
0.012(0.3) Typ.
–
V
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
(I
E
=100µΑ)
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Collector-Base Breakdown Voltage
(I
C
=100µΑ)
•
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123H
•
Collector Cutoff Current (V
CB
=35V)
(BR)EBO
5
–
–
V
Mechanical data
V
(BR)CBO
I
CBO
40
–
–
–
0.031(0.8) Typ.
–
150
150
V
0.040(1.0)
0.024(0.6)
nA
0.031(0.8) Typ.
I
EBO
•
Emitter Cutoff Current (V
EB
=4V)
solderable per MIL-STD-750
Terminals :Plated terminals,
,
–
–
nA
ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
Method 2026
•
Polarity : Indicated by cathode band
Mounting Position : Any
•
Charateristic
•
DC Current Gain
Weight : Approximated 0.011 gram
I
C
=100mA,V
CE
=1V
MAXIMUM
Dimensions in inches and (millimeters)
Symbol
Min
Typ
Max
Unit
h
FE
100
-
400
RATINGS AND ELECTRICAL CHARACTERISTICS
MHZ
Ratings at 25℃ ambient temperature unless otherwise specified.
Collector-Emitter Saturation Voltage
Single phase half wave, 60Hz, resistive of inductive load.
(I
C
=800mA, I
B
=80mA)
V
CE(sat)
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
-
-
0.5
V
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
V
RRM
V
RMS
V
DC
12
20
14
20
13
30
21
30
14
40
15
50
35
50
16
60
42
60
1.0
30
40
120
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
NOTE :
*
P
Q
R
28
40
h
F E
100~200
Maximum Average Forward Rectified Current
150~300
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
200-400
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
1
General Purpose Transistors
Features
WILLAS
FM120-M
8050xLT1
THRU
FM1200-M
Pb Free Produc
Package outline
FIG.2 - Saturation Vol tage & Collect or Current
SOD-123H
1000
better
FIG.1 - Current Gain
current
ctor Current
resistance.
reverse leakage
& Colle
and thermal
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
V
CE
=1V
High
•
100
surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
•
10
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
1
Mechanical data
0.001
0.01
0.1
1
10
100
1000
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Saturation Voltage (V)
hFE
0.1
0.071(1.8)
0.056(1.4)
V
CE(sat)
@ I
C
=10I
B
0.01
0.01
0.1
Collector
flame retardant
•
Epoxy : UL94-V0 rated
Current (mA)
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
1
Collector Current (mA)
1
10
100
1000
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
FIG.3 - On Voltage & Colle ctor Current
Method 2026
1000
FIG.4 - Cutoff Frequency & Collect or Current
Dimensions in inches and (millimeters)
V
CE
=10V
Cutoff Frequency (MHz)
On Voltage (V)
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
V
BE(ON)
@ V
CE
=1V
•
Weight : Approximated 0.011 gram
100
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
10
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking
0.1
Code
Maximum
0.01
Recurrent
0.1
Peak
1
Reverse
10
Voltage
100
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum RMS Voltage
Collector Current (mA)
V
RRM
V
RMS
V
DC
I
FSM
R
ΘJA
C
J
T
J
TSTG
1000
12
20
14
20
13
30
21
30
1
1
14
40
28
40
15
10
50
35
50
Collector Current (mA)
16
60
100
18
80
56
80
10
1000
100
70
100
115
150
105
150
120
200
140
200
42
Maximum DC Blocking Voltage
60
1.0
30
FIG.5
Forward Rectified Current
Maximum Average
- Capaci tance & Reverse-Biased Voltage
I
O
100
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
10
Cob
Storage Temperature Range
Capacitance (pF)
Typical Thermal Resistance (Note 2)
-55 to +125
40
120
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
0.1
1
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T A=125℃
10
0.50
0.70
0.5
10
0.85
0.9
0.92
I
R
100
NOTES:
Reverse-Biased Voltage (V)
1
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
General Purpose Transistors
SOT-23
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
WILLAS
FM120-M
8050xLT1
THRU
FM1200-M
Pb Free Produc
Features
Package outline
.006(0.15)MIN.
SOD-123H
•
Low profile surface mounted application in order to
optimize board space.
•
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated
.080(2.04)
terminals, solderable per MIL-STD-750
Method 2026
.070(1.78)
0.031(0.8) Typ.
.083(2.10)
.110(2.80)
•
Low power loss, high efficiency.
.122(3.10)
•
High current capability, low forward voltage drop.
•
High surge capability.
.106(2.70)
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
.063(1.60)
.047(1.20)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
.008(0.20)
0.031(0.8) Typ.
.003(0.08)
Dimensions in inches and (millimeters)
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃
.004(0.10)MAX.
unless otherwise specified.
ambient temperature
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
.020(0.50)
V
RRM
.012(0.30)
V
RMS
V
DC
I
O
12
20
14
20
.055(1.40)
.035(0.89)
13
30
21
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
40
120
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
30
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Dimensions in inches and (millimeters)
I
FSM
R
ΘJA
C
J
T
J
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
0.037
0.95
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
0.037
0.95
TSTG
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
I
R
0.079
2.0
NOTES:
0.035
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.9
0.031
0.8
inches
mm
2012-
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
京公网安备 11010802033920号
EEWORLD
