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8550HXLT1

Description
General Purpose Transistors
File Size380KB,3 Pages
ManufacturerWILLAS ELECTRONIC CORP.
Websitehttp://www.willas.com.tw/
Download Datasheet View All

8550HXLT1 Overview

General Purpose Transistors

WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
FEATURE
Guardring
current capacity in
protection.
High
for overvoltage
compact package.
Ultra
I
high-speed switching.
C
=1.5A.
Silicon epitaxial planar chip, metal silicon junction.
Epitaxial planar type.
Lead-free parts meet environmental standards of
PNP complement:
MIL-STD-19500 /228
8550H
We declare that the material
"G"
RoHS product for packing code suffix
of product compliance with RoHS requirements.
Pb-Free package is available
Halogen free product for packing code suffix "H"
8550HXLT1
FM120-M
THRU
General Purpose Transistors
Features
FM1200-M
Pb Free Product
Package outline
SOD-123H
PNP Silicon
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOT–23
COLLECTOR
0.040(1.0)
0.024(0.6)
3
Mechanical data
RoHS product for packing code suffix ”G”
Halogen free product for packing
Epoxy : UL94-V0 rated flame retardant
code suffix “H”
Case : Molded plastic, SOD-123H
,
DEVICE MARKING AND
Terminals :Plated terminals,
ORDERING INFORMATION
solderable per MIL-STD-750
Device
Method 2026
Marking
8550HQLT1
1HD
Polarity : Indicated by cathode band
Mounting Position : Any
Y2
8550HRLT1
Weight : Approximated 0.011 gram
0.031(0.8) Typ.
0.031(0.8) Typ.
Shipping
3000/Tape&Reel
3000/Tape&Reel
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
 
Emitter-Base Voltage
RATINGS
Marking Code
Collector Current-continuoun
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
THERMAL CHARACTERISTICS
Pr
el
im
Ratings at 25℃ ambient temperature unless otherwise specified.
Rating
Symbol
Single phase half wave, 60Hz, resistive of inductive load.
Collector-Emitter Voltage
V
CEO
For capacitive load, derate current by 20%
Collector-Base Voltage
V
CBO
25
V
40
V
V
EBO
5
V
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
1500
mAdc
16
12
I
C
13
14
15
18
10
115
120
20
30
40
50
60
80
100
150
200
Volts
V
RRM
V
RMS
V
DC
14
20
Symbol
30
21
ina
Max
Unit
ry
Max
40
225
1.8
28
35
50
1
BASE
Dimensions in inches and (millimeters)
2
EMITTER
Characteristic
Maximum DC Blocking Voltage
 
Unit
60
mW
mW/°C
°C/W
42
1.0
 
30
40
120
56
80
70
100
105
150
140
200
Volts
Volts
Total Device Dissipation FR-5
Maximum Average Forward Rectified Current
Board,(1)
I
O
Peak Forward Surge Current 8.3 ms single half sine-wave
P
D
Amps
T
A
=25°C
Derate above 25°C
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 1)
 
I
FSM
 
 
℃/W
PF
Amps
Typical Thermal Resistance (Note 2)
R
Thermal Resistance,Junction to Ambient
ΘJA
Total Device Dissipation
Operating Temperature Range
Alumina Substrate,(2) TA=25°C
Storage Temperature Range
C
J
T
J
R
θ
J A
 
 
556
 
-55 to +150
P
D
-55 to +125
300
2.4
 
mW
-
65
to +175
mW/°C
0.70
°C/W
TSTG
 
Derate above 25°C
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
Maximum Forward Voltage at 1.0A DC
Thermal Resistance,Junction to Ambient
V
F
Rated DC Blocking Voltage
 
R
θ
J A
T
j,
T
S
t
g
0.50
417
0.85
0.5
10
0.9
0.92
 
Volts
Maximum Average Reverse Current at
Storage Temperature
Operating
Junction and
@T A=25℃
@T A=125℃
I
R
-55 to +150
°C
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 
 
2012-07
2012-06
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WILLAS ELECTRONIC CORP.
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