WILLAS
SOT-23 Plastic-Encapsulate Transistors
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
TRANSISTOR (PNP)
board space.
optimize
FEATURES
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
Pb-Free
High surge capability.
•
package is available
•
Guardring
packing code suffix ”G”
RoHS product for
for overvoltage protection.
•
Ultra high-speed switching.
Halogen
Silicon epitaxial planar chip, metal silicon junction.
•
free product for packing code suffix “H”
Collector current: I
C
=0.5A
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
MARKING :
Halogen free product for packing code suffix "H"
2TY
FM120-M
8550SLT1
THRU
FM1200-M
PACKAGE
Pb Free Prod
Features
Package outline
SOT-23
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1. BASE
2. EMITTER
3. COLLECTOR
0.071(1.8)
0.056(1.4)
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
•
Epoxy : UL94-V0 rated flame retardant
•
Symbol
Case : Molded plastic, SOD-123H
Parameter
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Mechanical data
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Value
-40
-25
-5
-0.5
0.3
150
-55-150
Unit
0.031(0.8) Typ.
V
V
•
Polarity : Indicated by cathode band
Emitter-Base
Any
•
Mounting Position :
Voltage
Collector Current -Continuous
•
Weight : Approximated 0.011 gram
Collector Power Dissipation
Ratings at 25℃ ambient temperature unless otherwise specified.
Storage
60Hz, resistive
Single phase half wave,
Temperature
of inductive load.
For capacitive load, derate current by 20%
RATINGS
Collector-Emitter Voltage
Method 2026
Dimensions in inches and (millimeters)
V
A
W
℃
℃
Junction Temperature
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH
SYMBOL
FM120-M
FM1200
Marking Code
Parameter
Maximum Recurrent Peak Reverse Voltage
Collector-base breakdown voltage
Maximum DC Blocking Voltage
Collector-emitter breakdown voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
V
RRM
V
RMS
V
DC
Symbol
20
V
(BR)CBO
20
14
12
13
14
15
Test conditions
30
40
50
16
60
42
60
Min
80
-40
1.0
-25
30
56
80
18
Max
100
70
100
10
Unit
150
V
V
V
105
150
115
120
200
140
200
Maximum RMS Voltage
I
30
= -100
μ
A, I
E
=0
C
40
50
I
C
=-1mA, I
B
=0
I
E
= -100
μ
A, I
C
=0
21
28
35
Emitter-base breakdown
(JEDEC method)
superimposed on rated load
voltage
Collector cut-off current
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Typical Thermal Resistance (Note 2)
I
O
V
(BR)CEO
I
FSM
V
(BR)EBO
I
CBO
I
CEO
-5
R
ΘJA
C
J
T
J
TSTG
-55 to +125
V
= -40V, I
E
=0
CB
40
120
-0.1
-0.1
-
65
to +175
-55 to +150
μ
A
μ
A
0.9
Collector cut-off current
Storage Temperature Range
V
CE
= -20V, I
B
=0
CHARACTERISTICS
Emitter cut-off current
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
DC current gain
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
A
SYMBOL
I
EBO
V
EB
= -3V, I
C
=0
-0.1
μ
FM1150-MH
FM1200-
V
F
I
R
0.50
0.70
0.85
0.92
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
V
CE
= -1V, I
C
= -50mA
V
CE
= -1V, I
C
= -500mA
I
C
=-500mA, I
B
= -50mA
I
C
=-500mA, I
B
= -50mA
V
CE
= -6V, I
C
= -20mA
0.5
120
10
400
@T A=125℃
NOTES:
50
-0.6
-1.2
150
V
V
MHz
Collector-emitter saturation voltage
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Base-emitter saturation voltage
Transition frequency
f
T
f=
30MHz
CLASSIFICATION OF h
FE(1)
Rank
2012-06
Range
L
120-200
200-350
H
WILLAS ELECTRONIC CO
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS
SOT-23 Plastic-Encapsulate Transistors
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
PACKAGE
V
CE
I
C
——
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
-400uA
COMMON
-80
optimize board space.
EMITTER
-360uA
T
a
=25
℃
•
Low power loss, high efficiency.
-70
-320uA
•
High current capability, low forward voltage drop.
-280uA
-60
•
High surge capability.
-240uA
•
-50
Guardring for overvoltage protection.
-200uA
•
Ultra high-speed switching.
-40
silicon
•
Silicon epitaxial planar chip, metal
-160uA
junction.
-30
•
Lead-free parts meet environmental standards of
-120uA
MIL-STD-19500 /228
-20
-80uA
•
RoHS product for packing code suffix "G"
I
B
=-40uA
-10
Halogen free product for packing code suffix "H"
-90
FM120-M
THRU
8550SLT1
FM1200-M
Pb Free Produ
Package
Typical Characteristics
outline
•
Batch process design, excellent power dissipation offers
Features
h
FE
500
——
I
C
SOD-123H
T
a
=100
℃
(mA)
0.146(3.7)
0.130(3.3)
h
FE
0.012(0.3) Typ.
I
C
T
a
=25
℃
100
COLLECTOR CURRENT
DC CURRENT GAIN
0.071(1.8)
0.056(1.4)
-0
Mechanical data
-0
-2
-4
-6
COMMON EMITTER
V
CE
=-1V
10
-1
-10
-100
-500
-8
-10
-12
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
V
BEsat
——
I
C
,
-1200
Terminals :Plated terminals, solderable per MIL-STD-750
-500
•
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
V
CEsat
——
I
C
0.031(0.8) Typ.
Method 2026
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
-800
2 5
℃
T=
•
Weight : Approximated 0.011 gram
a
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
Dimensions in inches and (millimeters)
-100
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
-400
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
100
℃
=
T
a
5
℃
=2
T
a
100
T
a
=
℃
RATINGS
-1
-10
-100
FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
SYMBOL
FM120-M
H
-10
-500
β=10
β=10
Marking Code
Maximum RMS Voltage
-500
COLLECTOR CURRENT
C
BE
I
C
(mA)
Maximum Recurrent Peak Reverse Voltage
I —— V
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
COMMON EMITTER
V
CE
=-1V
-900
12
20
14
(MHz)
-1
13
30
21
30
14
40
28
40
COLLECTOR CURRENT
15
16
-10
-100
400
50
——
60
f
T
I
C
35
42
50
60
I
C
(mA)
18
-500
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Maximum DC Blocking Voltage
(mA)
20
TRANSITION FREQUENCY
COLLECTOR CURRENT
T =1
00
℃
a
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
T =2
5
℃
a
I
C
f
T
Maximum Average Forward Rectified Current
-100
100
1.0
30
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
Typical
-10
Junction Capacitance (Note 1)
-55 to +125
40
120
-55 to +150
V
CE
=-6V
T
a
=25
℃
COMMON
-
65
to +175
EMITTER
-1
-0
CHARACTERISTICS
-300
-600
10
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
Maximum Forward Voltage at 1.0A DC
BASE-EMMITER VOLTAGE
Rated DC Blocking Voltage
50
Maximum Average Reverse Current at @T A=25℃
C
ob
/C
ib
——
V
BE
(mV)
V
F
I
R
-1200
-1
0.50
COLLECTOR
0.70
CURRENT
-10
I
C
(mA)
0.85
-100
0.9
0.92
@T
CB EB
A=125℃
V /V
400
P
C
——
T
a
0.5
10
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
C
ib
COLLECTOR POWER DISSIPATION
P
C
(mW)
NOTES:
2- Thermal Resistance From Junction to Ambient
C
10
300
CAPACITANCE
(pF)
C
ob
200
100
f=1MHz
I
E
=0/I
C
=0
2012-06
1
-0.1
-1
T
a
=25
℃
0
-10
-20
0
25
50
75
WILLAS ELECTRONIC COR
100
125
150
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS
SOT-23 Plastic-Encapsulate Transistors
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
FM120-M
THRU
8550SLT1
FM1200-M
PACKAGE
Pb Free Produ
Features
Package outline
SOD-123H
Outline Drawing
Mechanical data
SOT-23
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
.006(0.15)MIN.
.063(1.60)
.047(1.20)
•
Epoxy : UL94-V0 rated flame retardant
.122(3.10)
•
Case : Molded plastic, SOD-123H
,
.106(2.70)
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
.080(2.04)
Maximum Average Forward Rectified Current
.070(1.78)
Maximum DC Blocking Voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
.008(0.20)
56
70
80
100
.003(0.08)
18
80
10
100
.083(2.10)
.110(2.80)
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
115
150
105
150
120
200
140
200
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
-
65
to +175
CHARACTERISTICS
.004(0.10)MAX.
DC
Maximum Forward Voltage at 1.0A
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
I
R
0.50
0.70
0.5
10
0.85
0.9
0.92
@T A=125℃
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
.020(0.50)
.012(0.30)
2012-06
Dimensions in inches and (millimeters)
.055(1.40)
.035(0.89)
WILLAS ELECTRONIC COR
Rev.D
2012-
0
WILLAS ELECTRONIC CORP.
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