WILLAS
Power MOSFET 200 mAmps, 50 Volts
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
Typical applications are dc–dc converters, power management in
•
Guardring for overvoltage protection.
portable and battery–powered products such as computers, printers,
•
Ultra high-speed switching.
PCMCIA cards, cellular and cordless telephones.
•
Silicon epitaxial planar chip, metal silicon junction.
Low Threshold Voltage (V
GS(th)
: 0.5V...1.5V) makes it ideal for low
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
voltage applications
•
RoHS product for packing code suffix "G"
Miniature SOT–23 Surface Mount Package saves board space
Halogen free product for packing code suffix "H"
FM120-M
THRU
BSS 8LT1
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
SOD-123H
N–Channel SOT–23
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
•
•
Mechanical
is available
•
Pb-Free package
data
•
Epoxy : UL94-V0
packing code suffix
RoHS product for
rated flame retardant
”G”
•
Case :
free product
SOD-123H
Halogen
Molded plastic,
for packing code suffix “H”
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
SOT –23
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
N - Channel
3
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
1
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
o
MARKING DIAGRAM
& PIN ASSIGNMENT
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
2
M
V
RRM
V
RMS
V
DC
I
O
I
FSM
Symbol
R
ΘJA
V
DSS
C
J
V
GS
T
J
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
J1
70
10
100
100
115
150
105
150
120
200
140
200
Volts
Volts
Volts
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
MAXIMUM RATINGS (T
A
= 25 C unless otherwise noted)
J1 = Device Code
M = Month Code
Amps
℃/W
PF
℃
℃
UNIT
Volts
mAmps
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Rating
Value
50
±
20
Unit
Vdc
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Operating Temperature Range
Drain Current
Storage Temperature Range
Vdc
-55 to +125
40
120
ORDERING INFORMATION
-55 to +150
– Continuous @ TA = 25°C
– Pulsed Drain Current (tp
≤
10
µs)
CHARACTERISTICS
I
DM
I
D
TSTG
SYMBOL
mA
Shipping
200
BSS138LT1
SOT–23
3000 Tape & Reel
800
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
225
– 55 to
150
556
260
mW
0.50
°C
°C/W
°C
0.70
0.5
10
0.85
0.9
0.92
-
65
to
Device
+175
Package
Maximum
Power Dissipation @ TA
DC
Total
Forward Voltage at 1.0A
= 25°C
P
D
V
F
Maximum Average Reverse Current at @T A=25℃
T T
Operating and Storage Temperature
I
J, stg
R
@T A=125℃
Rated
Range
DC Blocking Voltage
Thermal Resistance – Junction–to–Ambient
NOTES:
Purposes, for
From Junction
2- Thermal Resistance
10 seconds
to Ambient
R
θJA
1- Measured at 1 MHZ
Temperature for Soldering
4.0 VDC.
Maximum Lead
and applied reverse voltage of
T
L
2012-06
WILLAS ELECTRONIC CORP.
2012-10
WILLAS ELECTRONIC CORP.
WILLAS
Power MOSFET 200 mAmps, 50 Volts
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
•
Low power loss, high efficiency.
forward voltage
•
High current capability, low
Characteristic
drop.
•
High surge capability.
OFF CHARACTERISTICS
•
Guardring for overvoltage protection.
Drain–to–Source Breakdown Voltage
•
Ultra high-speed switching.
(V
GS
=
epitaxial planar chip,
•
Silicon
0 Vdc, I
D
= 250
µAdc)
metal silicon junction.
•
Lead-free parts
Drain Current
Zero Gate Voltage
meet environmental standards of
MIL-STD-19500
GS
= 0 Vdc)
(V
DS
= 25 Vdc, V
/228
•
RoHS
= 50 Vdc, V
GS
= 0 Vdc)
suffix "G"
(V
DS
product for packing code
Halogen free product for packing code suffix "H"
Gate–Source Leakage Current (V
GS
=
±
20 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
(Note 1.)
•
Epoxy : UL94-V0 rated flame retardant
Gate–Source Threshold Voltage
•
Case
=
Molded
= 1.0 mAdc)
(V
DS
:
V
GS
, I
D
plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Static Drain–to–Source On–Resistance
(V
GS
= 2.75
Method
< 200 mAdc, T
A
= –40°C to +85°C)
Vdc, I
D
2026
(V
GS
=
: Indicated
200 mAdc)
•
Polarity
5.0 Vdc, I
D
=
by cathode band
Forward Transconductance
•
Mounting Position : Any
(V
DS
=
= 1.0
•
Weight
25 Vdc, I
D
= 200 mAdc, f
gram
kHz)
: Approximated 0.011
DYNAMIC CHARACTERISTICS
FM120-M
THRU
BSS 8LT1
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
Symbol
V
(BR)DSS
I
DSS
Min
50
Typ
–
Max
–
0.012(0.3) Typ.
Unit
Vdc
0.071(1.8)
0.056(1.4)
–
–
–
0.5
–
–
–
–
0.1
0.5
±0.1
0.040(1.0)
0.024(0.6)
µAdc
Mechanical data
I
GSS
V
GS(th)
0.031(0.8) Typ.
µAdc
Vdc
Ohms
1.5
0.031(0.8) Typ.
r
DS(on)
–
5.6
10
–
–
3.5
Dimensions in inches and (millimeters)
100
–
–
g
fs
mmhos
MAXIMUM RATINGS AND ELECTRICAL
0, f = 1 MHz)
(V
DS
= 25 Vdc, V
GS
=
CHARACTERISTICS
C
iss
Input Capacitance
Ratings
Output Capacitance
at 25℃ ambient temperature unless otherwise specified.
= 0, f = 1 MHz)
(V = 25 Vdc, V
C
–
–
–
40
12
3.5
50
25
5.0
pF
Single phase half wave, 60Hz, resistive of inductive load.
Transfer Capacitance
(V
DG
= 25 Vdc, V
GS
= 0, f = 1 MHz)
For capacitive load, derate current by 20%
DS
GS
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2.)
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
UNIT
ns
120
Turn–On Delay Time
t
d(on)
–
–
20
Marking Code
12
13
14
15
16
18
10
115
(V
DD
= 30 Vdc, I
D
= 0.2 Adc,)
20
30
40
50
60
–
80
–
100
20
150
200
Maximum Recurrent Peak Reverse Voltage
Volts
V
RRM
Turn–Off Delay Time
t
d(off)
Volts
14
21
28
35
42
56
70
105
140
Maximum
Pulse
Voltage
V
≤
2%.
1.
RMS
Test: Pulse Width
≤
300
µs,
Duty Cycle
RMS
Volts
2.
DC Blocking Voltage
operating junction temperature.
Maximum
Switching characteristics are independent of
V
DC
20
30
40
50
60
80
100
150
200
Maximum Average Forward Rectified Current
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
1.0
30
Amps
Amps
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
℃/W
PF
℃
℃
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
Volts
mAmps
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP.
2012-10
WILLAS ELECTRONIC CORP.
WILLAS
Power MOSFET 200 mAmps, 50 Volts
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
PACKAGE
TYPICAL ELECTRICAL CHARACTERISTICS
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
0.8
optimize board space.
VGS = 3.5
TJ 25°C
•
Low power
=
loss, high efficiency.
V
0.7
•
High current capability, low forward voltage drop.
VGS = 3.25 V
•
High surge capability.
0.6
•
Guardring for overvoltage protection.
VGS = 3.0 V
0.5
•
Ultra high-speed switching.
VGS =
•
Silicon epitaxial planar chip, metal silicon junction.
2.75 V
0.4
•
Lead-free parts meet environmental standards of
VGS = 2.5 V
MIL-STD-19500 /228
0.3
•
RoHS product for packing code suffix "G"
0.2
Halogen free product for packing code suffix "H"
I D , DRAIN CURRENT (AMPS)
FM120-M
THRU
BSS 8LT1
FM1200-M
Pb Free Product
Features
Package outline
SOD-123H
0.9
0.8
I D , DRAIN CURRENT (AMPS)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
VDS = 10 V
0.146(3.7)
0.130(3.3)
25°C
-55°C
0.012(0.3) Typ.
150°C
0.071(1.8)
0.056(1.4)
Mechanical data
0.1
•
Epoxy : UL94-V0 rated flame retardant
0
2
4
5
7
8
9
10
1
3
•
Case
0
: Molded plastic, SOD-123H
6
,
VDS
terminals, solderable per MIL-STD-750
•
Terminals :Plated
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0
0.5
1
1.5
2
2.5
3
0.031(0.8) Typ.
3.5
4
4.5
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
1.25
Figure 2. Transfer Characteristics
Dimensions in inches and (millimeters)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
2.2
•
Weight : Approximated 0.011 gram
2
Vgs(th) , VARIANCE (VOLTS)
VGS = 10 V
ID = 1.0 mA
Ratings at 25℃ ambient temperature unless otherwise specified.
1.6
Single phase half wave, 60Hz, resistive of inductive load.
VGS = 4.5 V
For capacitive load, derate current by 20%
1.4
ID = 0.5 A
Marking Code
ID = 0.8 A
1.8
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
1.125
1
14
0.875
40
28
40
0.75
-55
15
50
35
50
16
60
42
60
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
1.2
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
1
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
0.8
Maximum DC Blocking Voltage
V
RRM
V
RMS
V
DC
12
20
14
20
13
30
21
30
Volts
Volts
Volts
Amps
0.6
-55
-5
Maximum Average Forward Rectified Current
I
O
95
TJ, JUNCTION TEMPERATURE (°C)
Peak Forward Surge Current 8.3 ms single half sine-wave
I
FSM
superimposed on rated load (JEDEC method)
Figure 3. On–Resistance
45
145
-30
-5
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
Variation with
Temperature
ΘJA
R
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
10
8
6
C
J
T
J
VDS = 40 V
TSTG
TJ = 25°C
V
F
I
R
-55 to +125
Figure 4. Threshold Voltage Variation
with Temperature
40
120
45
95
20
70
1.0
TJ, JUNCTION TEMPERATURE (°C)
30
120
145
Amps
℃/W
PF
℃
℃
-
65
to +175
-55 to +150
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
0.50
0.70
0.5
10
0.85
0.9
0.92
Volts
mAmps
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
NOTES:
2- Thermal Resistance From Junction to Ambient
4
ID = 200 mA
2
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0
0
500
1000
1500
2000
2500
3000
QT, TOTAL GATE CHARGE (pC)
Figure 5. Gate Charge
2012-06
WILLAS ELECTRONIC CORP.
2012-10
WILLAS ELECTRONIC CORP.
WILLAS
Power MOSFET 200 mAmps, 50 Volts
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
•
Batch process design, excellent power dissipation offers
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
FM120-M
THRU
BSS 8LT1
FM1200-M
Pb Free Product
PACKAGE
Features
TYPICAL ELECTRICAL CHARACTERISTICS
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
8
7
6
5
4
3
2
1
0
0.05
Package outline
SOD-123H
better reverse leakage current and thermal resistance.
profile surface mounted application in order to
•
Low
10
optimize
VGS = 2.5 V
board space.
9
•
Low power loss, high efficiency.
8
•
High current capability, low forward voltage drop.
150°C
•
High surge capability.
7
•
Guardring for overvoltage protection.
6
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
5
•
Lead-free parts meet environmental standards of
25°C
4
MIL-STD-19500 /228
•
RoHS
3
product for packing code suffix "G"
-55°C
Halogen free product for packing code suffix "H"
2
Mechanical data
1
•
Epoxy : UL94-V0 rated flame retardant
0.05
0.15
0
0.1
0.2
•
Case : Molded plastic,
I
SOD-123H
D, DRAIN CURRENT (AMPS)
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
0.25
VGS = 2.75 V
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
150°C
0.071(1.8)
0.056(1.4)
25°C
-55°C
0.1
0.15
0.040(1.0)
0.024(0.6)
0.2
0.25
0.031(0.8) Typ.
0.031(0.8) Typ.
ID, DRAIN CURRENT (AMPS)
Figure 6. On–Resistance versus Drain Current
Method 2026
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
4.5
4
Figure 7. On–Resistance versus Drain Current
Dimensions in inches and (millimeters)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
•
Polarity : Indicated by cathode band
6
•
Mounting
V
Position
V
: Any
GS = 4.5
5.5
•
Weight : Approximated 0.011 gram
5
4.5
MAXIMUM
150°C
VGS = 10 V
150°C
3.5
RATINGS AND ELECTRICAL CHARACTERISTICS
3
2.5
2
14
40
1.5
15
50
35
50
0.05 0.1
16
60
42
18
80
56
10
100
70
Ratings at 25℃ ambient temperature unless otherwise specified.
4
Single phase
3.5
wave, 60Hz, resistive of inductive load.
half
For capacitive load, derate current by 20%
3
25°C
Marking Code
25°C
115
150
-55°C
105
120
200
140
2.5
2
1.5
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
RRM
V
RMS
12
-55°C
20
14
13
30
21
Volts
Volts
Volts
Amps
Amps
℃/W
PF
℃
℃
1
Maximum DC Blocking Voltage
0
0.05
20
0.35 0.4 0.45
30
0.3
V
DC
0.5
Maximum Average Forward Rectified
, DRAIN CURRENT (AMPS)
Current
I
O
ID
Peak Forward Surge Current 8.3 ms single half sine-wave
I
Drain Current
Figure 8. On–Resistance versus
FSM
0.1
0.15
0.2
0.25
28
1
40
0
superimposed on rated load (JEDEC method)
60
100
150
0.15 0.2
80
0.25 0.3 0.35 0.4 0.45
200
0.5
1.0
ID, DRAIN CURRENT (AMPS)
Figure 9. On–Resistance versus Drain Current
30
40
120
Typical Thermal Resistance (Note 2)
Typical Junction
1
Capacitance (Note 1)
Operating Temperature Range
R
ΘJA
C
J
T
J
TSTG
-55 to +125
120
100
-55 to +150
-
65
to +175
I D , DIODE CURRENT (AMPS)
Storage Temperature Range
0.1
CHARACTERISTICS
TJ = 150°C
25°C
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
80
-55°C
V
F
I
R
0.50
0.70
0.85
0.9
0.92
Volts
@T A=125℃
60
40
20
1.0
1.2
0
Crss
0
5
0.5
NOTES:
0.01
Ciss
10
Coss
mAmps
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.001
0
0.2
0.4
0.6
0.8
10
15
20
25
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 10. Body Diode Forward Voltage
Figure 11. Capacitance
2012-06
WILLAS ELECTRONIC CORP.
2012-10
WILLAS ELECTRONIC CORP.
WILLAS
Power MOSFET 200 mAmps, 50 Volts
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
SOT-23
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
.122(3.10)
•
Guardring for overvoltage protection.
.106(2.70)
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
FM120-M
THRU
BSS 8LT1
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
SOD-123H
.006(0.15)MIN.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
.063(1.60)
.047(1.20)
0.071(1.8)
0.056(1.4)
.110(2.80)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.031(0.8) Typ.
.086(2.10)
10
100
70
100
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
.080(2.04)
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
.070(1.78)
•
Weight : Approximated 0.011 gram
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.008(0.20)
Dimensions in inches and (millimeters)
.003(0.08)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.004(0.10)MAX.
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
.055(1.40)
.035(0.89)
V
RRM
V
RMS
12
20
14
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
40
120
18
80
56
80
115
150
105
150
120
200
140
200
Volts
Volts
Volts
Amps
.020(0.50)
20
V
DC
.012(0.30)
I
O
I
FSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Amps
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
Dimensions in inches and (millimeters)
R
ΘJA
C
J
0.037
TSTG
0.95
T
J
-55 to +125
0.037
0.95
-
65
to +175
-55 to +150
℃/W
PF
℃
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
V
F
@T A=125℃
0.50
I
R
0.70
0.079
2.0
0.85
0.5
10
0.9
0.92
Volts
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.035
0.9
0.031
0.8
inches
mm
2012-10
WILLAS ELECTRONIC CORP.
FPGA/CPLD
京公网安备 11010802033920号
EEWORLD
