FM120-M
DTA114ECA
THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
SOD-123H
•
Low profile surface mounted application in order to
•
Features
power loss, high efficiency.
•
Low
optimize board space.
•
•
•
•
•
Built-in
MIL-STD-19500
enable the configuration of an inverter circuit
bias resistors
/228
•
RoHS product for packing
input
suffix "G"
without connecting external
code
resistors
Halogen free
consist of thin-film resistors
The bias resistors
product for packing code suffix "H"
with complete
Mechanical data
isolation to allow negative biasing of the input. They also have the
advantage of
:
almost completely eliminating parasitic effects.
•
Epoxy UL94-V0 rated flame retardant
Only the on/off conditions need to be set for operation, making
•
Case : Molded plastic, SOD-123H
device design easy
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
.063(1.60)
.047(1.20)
•
High current capability, low forward voltage drop.
Pb-Free package is available
•
High surge capability.
RoHS product for packing code suffix ”G”
•
Guardring for overvoltage protection.
Halogen free product
switching.
•
Ultra high-speed
for packing code suffix “H”
Epoxy
Silicon epitaxial
V-0 flammability rating
junction.
•
meets UL 94
planar chip, metal silicon
Moisure Sensitivity Level 1
•
Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOT-23
.122(3.10)
.106(2.70)
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
.080(2.04)
.070(1.78)
.006(0.15)MIN.
Dimensions in inches and (millimeters)
Absolute maximum ratings @ 25
band
•
Polarity : Indicated by cathode
Electrical Characteristics @ 25
Marking Code
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
12
Symbol
Parameter
Min
Typ
Max
20
Maximum Recurrent Peak Reverse Voltage
V
RRM
V
I(off)
-0.5
---
---
Input voltage (V
CC
=-5V, I
O
=-100
A)
Maximum RMS Voltage
(V
O
=-0.3V, I
O
=-10mA)
V
RMS
---
14
-3.0
V
I(on)
---
V
O(on)
Output voltage (I
O
/I
I
-10mA/-0.5mA
=
---
DC
---
20
-0.3
Maximum DC Blocking Voltage
V
I
I
=
I
-5V)
Input current (V
---
---
-0.88
Maximum Average Forward Rectified Current
I
O
---
I
O(off)
=-50V, V
---
-0.5
Output current (V
CC
=
I
0)
G
I
DC current gain (V
O
=-5V, I
O
-5mA)
=
30
---
---
Peak Forward Surge Current 8.3 ms single half sine-wave
I
FSM
10
R
1
Input resistance
7.0
13
superimposed on rated load (JEDEC method)
R
2
/R
1
Resistance ratio
0.8
1.0
1.2
Typical Thermal Resistance (Note 2)
R
ΘJA
Transition frequency
f
T
---
250
---
(V
O
=-10V, I
O
=5mA, f=100MHz)
Typical Junction Capacitance (Note 1)
C
J
Operating Temperature Range
Storage Temperature Range
13
Unit
30
V
21
V
30
V
mA
A
K¡
14
40
28
40
15
50
35
50
16
60
42
60
18
.008(0.20)
10
80
.003(0.08)
100
56
70
80
100
.083(2.10)
.110(2.80)
Symbol
Parameter
Min
Typ
Max
Unit
•
Mounting Position : Any
V
CC
Supply voltage
---
-50
---
V
V
IN
Input voltage
-40
---
10
V
•
Weight : Approximated 0.011 gram
-50
I
O
Output current
---
---
mA
I
C(MAX)
-100
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
P
d
Power dissipation
---
200
---
mW
Ratings at 25℃ ambient temperature unless otherwise specified.
---
T
j
Junction temperature
---
150
Single phase half
temperature
resistive of inductive
-55
wave, 60Hz,
load.
---
T
stg
Storage
150
For capacitive load, derate current by 20%
115
150
105
150
120
200
140
200
MHz
T
J
TSTG
-55 to +125
40
120
.020(0.50)
.012(0.30)
-55 to +150
Dimensions in inches and (millimeters)
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
MARKING: 14
V
F
Maximum Average Reverse Current at @T A=25℃
I
R
@T A=125℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH
Solder
Suggested
FM1100-MH
FM1150-MH
FM1200-MH
.055(1.40)
.035(0.89)
1.0
.004(0.10)MAX.
30
0.50
0.70
0.5
.031
.800
10
.035
.900
0.85
Pad Layout
0.9
0.92
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
.079
2.000
inches
mm
.037
.950
.037
.950
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
FM120-M
DTA114ECA
THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
•
Batch process design, excellent power dissipation offers
ON Characteristics
WILLAS
Features
Typical Characteristics
Package outline
-10
SOD-123
PACKAGE
Pb Free Product
-100
better reverse leakage current and thermal resistance.
V =-0.3V
•
Low profile surface mounted application in
O
order to
optimize board space.
-30
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
-10
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
T
a
=25
℃
-3
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
T
a
=100
℃
MIL-STD-19500 /228
-1
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
OFF Characteristics
SOD-123H
-3
0.146(3.7)
0.130(3.3)
(V)
0.012(0.3) Typ.
(mA)
I
O
V
I(ON)
-1
0.071(1.8)
0.056(1.4)
INPUT VOLTAGE
OUTPUT CURRENT
-0.3
T
a
=100
℃
T
a
=25
℃
-0.1
-0.3
Mechanical data
-0.03
0.040(1.0)
0.024(0.6)
•
Epoxy : UL94-V0 rated flame retardant
-0.1
: Molded
-1
plastic,
-3
SOD-123H
•
Case
-0.3
-30
-0.1
-10
-100
,
OUTPUT
terminals,
I
solderable per MIL-STD-750
CURRENT
(mA)
•
Terminals :Plated
O
-0.01
-0.0
V
CC
=-5V
0.031(0.8) Typ.
-0.4
-0.8
-1.2
-1.6
0.031(0.8) Typ.
-2.0
INPUT VOLTAGE
V
I(OFF)
(V)
Method 2026
•
Polarity : Indicated by cathode band
:
I
—— I
O
•
Mounting Position
G
Any
1000
•
Weight : Approximated 0.011 gram
300
Dimensions in inches and (millimeters)
-1000
V
O(ON)
——
I
O
I
O
/I
I
=20
V
O
=-5V
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(mV)
V
O(ON)
-300
DC CURRENT GAIN
30
a
RATINGS
a
-100
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum RMS Voltage
Maximum DC Blocking Voltage
10
T
a
=25
℃
Maximum Recurrent Peak Reverse Voltage
V
RRM
V
RMS
V
DC
12
20
14
20
OUTPUT VOLTAGE
Ratings at 25℃ ambient temperature unless otherwise specified.
100
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
G
I
T =100
℃
T =100
℃
13
30
21
30
-30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
-10
18
80
56
80
10
T
a
=25
℃
100
70
100
115
150
105
150
120
200
140
200
Maximum Average Forward Rectified Current
I
O
Peak Forward Surge Current 8.3 ms single half sine-wave
1
-0.3
-3
-0.1
-1
-10
-30
I
FSM
superimposed on rated load (JEDEC method)
3
-100
-10
-30
-100
-1
-3
Typical Thermal Resistance (Note 2)
Operating Temperature Range
C
Storage Temperature Range
O
12
OUTPUT CURRENT
I
O
(mA)
R
ΘJA
C
J
T
J
TSTG
f=1MHz
T
a
=25
℃
OUTPUT CURRENT
Typical Junction Capacitance (Note 1)
-55 to +125
400
40
120
I
O
(mA)
-55 to +150
——
V
R
P
D
—— T
a
-
65
to +175
(pF)
(mW)
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
C
O
8
Rated DC Blocking Voltage
10
CHARACTERISTICS
350
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T A=125℃
0.50
300
0.70
0.5
10
0.85
0.9
0.92
I
R
m
P
D
POWER DISSIPATION
NOTES:
OUTPUT CAPACITANCE
250
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
6
200
DTA114ECA
2- Thermal Resistance From Junction to Ambient
4
150
100
2
50
0
0
4
8
12
16
20
0
0
25
50
75
100
a
125
150
2012-06
REVERSE BIAS VOLTAGE
V
R
(V)
AMBIENT TEMPERATURE
T ( )
WILLAS
℃
ELECTRONIC CORP
2012-
0
WILLAS ELECTRONIC CORP.
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