WILLAS
SOT-323 Plastic-Encapsulate Diodes
Features
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
FM120-M
THRU
DAN202U
FM1200-M
Pb Free Product
Package outline
SOT-323
SOD-123H
•
Batch process design, excellent power dissipation offers
SWITCHING DIODE
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
FEATURES:
Four types of packaging are available
•
Low power loss, high efficiency.
•
High current
High speed
capability, low forward voltage drop.
•
High surge capability.
Suitable for
for overvoltage protection.
•
Guardring
high packing density layout
High reliability
switching.
•
Ultra high-speed
•
Silicon
package is
chip, metal
Pb-Free
epitaxial planar
available
silicon junction.
•
Lead-free parts meet environmental standards of
RoHS product for packing code suffix ”G”
MIL-STD-19500 /228
•
RoHS product
product for packing code suffix “H”
Halogen free
for packing code suffix "G"
Moisture Sensitivity Level 1
Mechanical data
Halogen free product for packing code suffix "H"
optimize board space.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
1
3
2
0.040(1.0)
0.024(0.6)
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
MARKING:N
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
Maximum Ratings and
RATINGS AND ELECTRICAL
Single Diode @Ta=25
℃
MAXIMUM
Electrical Characteristics,
CHARACTERISTICS
Ratings at 25℃
Parameter
ambient temperature unless otherwise specified.
Symbol
Single phase half wave, 60Hz, resistive of inductive load.
Peak reverse voltage
V
RM
For capacitive load, derate current by 20%
Limit
80
Unit
V
16
60
42
60
1.0
30
40
120
18
80
56
80
10
100
70
100
115
mA
120
200
140
200
DC reverse voltage
RATINGS
Marking Code
(peak) forward current
Maximum
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
R
80
V
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNI
V
RRM
V
RMS
V
P
D
DC
I
T
j
O
I
FM
I
O
Average forward current
12
20
14
20
13
30
21
30
14
40
28
40
15
300
100
35
50
mA
105
mW
150
℃
℃
150
Volts
Volts
Power
DC Blocking Voltage
Maximum
dissipation
200
50
150
-55~+150
Volts
Maximum Average Forward Rectified Current
Junction temperature
Peak Forward Surge Current 8.3 ms single half sine-wave
Storage temperature
superimposed on rated load (JEDEC method)
Amp
FSM
I
T
stg
Amp
Typical Thermal Resistance (Note 2)
R
ΘJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
C
J
T
J
Max
-55 to +150
℃/W
℃
℃
PF
Parameter
TSTG
Symbol
V
(BR)
I
R
V
F
C
D
t
rr
-55 to +125
Test
conditions
-
65
to +175
Min
80
Unit
V
Reverse breakdown voltage
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
I
R
= 100μA
V
R
=70V
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
Maximum Average Reverse Current at @T A=25℃
Reverse voltage leakage current
Forward voltage
V
F
I
R
0.50
0.70
0.5
10
0.85
0.1
μA
V
pF
ns
0.9
0.92
Volt
@T A=125℃
mAm
NOTES:
I
F
=100mA
V
R
=6V, f=1MHz
V
R
=6V, I
F
=5mA
1.2
3.5
4
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Diode capacitance
Reverse recovery time
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.
WILLAS
SOT-323 Plastic-Encapsulate Diodes
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
Forward Characteristics
Ultra high-speed switching.
•
100
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
30
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
T=
a
1
00
℃
FM120-M
THRU
DAN202U
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
SOD-123H
Typical
Characteristics
1000
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Reverse
Characteristics
0.071(1.8)
0.056(1.4)
300
(mA)
REVERSE CURRENT I
R
Mechanical data
FORWARD CURRENT
I
F
10
(nA)
T
a
=100
℃
100
0.040(1.0)
0.024(0.6)
•
Epoxy : UL94-V0 rated flame retardant
3
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
1
T=
a
2
5
℃
30
0.031(0.8) Typ.
0.031(0.8) Typ.
10
T
a
=25
℃
Method 2026
•
Polarity : Indicated by cathode band
0.3
•
Mounting Position : Any
•
0.1
Weight : Approximated 0.011 gram
0.0
0.2
0.4
0.6
F
Dimensions in inches and (millimeters)
3
0.8
1.0
1.2
1
0
20
40
60
80
FORWARD VOLTAGE V (V)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
REVERSE VOLTAGE
V
R
(V)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Marking Code
1.6
Maximum RMS Voltage
CAPACITANCE BETWEEN TERMINALS
C
T
(pF)
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
RATINGS
Power Derating Curve
Capacitance Characteristics
T
V
RRM
a
=25
℃
f=1MHz
V
RMS
Maximum Recurrent Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
12
20
14
13
30
21
250
14
40
28
40
15
50
35
50
16
60
18
80
56
80
10
100
70
115
150
105
150
120
200
140
Vol
42
60
1.0
30
40
120
Vol
P
D
1.4
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
(mW)
V
DC
20
30
200
100
200
Vol
Am
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
1.2
POWER DISSIPATION
Peak Forward Surge Current 8.3 ms single half sine-wave
150
Am
100
-55 to +150
℃/
PF
-55 to +125
50
-
65
to +175
℃
℃
CHARACTERISTICS
Maximum
1.0
Forward Voltage at 1.0A DC
0
5
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
V
F
10
15
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
REVERSE VOLTAGE
@T A=125℃
V
R
(V)
I
R
20
0.50
0
0.70
25
50
0.85
0.5
10
75
100
125
0.9
150
0.92
Vo
0
AMBIENT TEMPERATURE
T
a
(
℃
)
mAm
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.
SOT-323 Plastic-Encapsulate Diodes
Features
WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
FM120-M
THRU
DAN202U
FM1200-M
Pb Free Product
Package outline
•
Batch process design, excellent power dissipation offers
Outline Drawing
Mechanical data
.054(1.35)
.045(1.15)
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
.070(1.80)
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
.087(2.20)
.004(0.10)MIN.
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
SOT-323
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
.056(1.40)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
.010(0.25)
16
18
10
.003(0.08)
100
60
80
42
60
1.0
30
56
80
70
.096(2.45)
.078(2.00)
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
115
150
105
150
120
200
140
200
Vol
.047(1.20)
Vol
100
Vol
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Am
Am
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
℃/
PF
.004(0.10)MAX.
CHARACTERISTICS
-
65
to +175
℃
℃
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
.043(1.10)
.032(0.80)
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
Vo
NOTES:
2- Thermal Resistance From Junction to Ambient
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
.016(0.40)
.008(0.20)
I
R
mAm
Dimensions in inches and (millimeters)
2012-06
WILLAS ELECTRONIC CORP.
Rev.D
2012-1
WILLAS ELECTRONIC CORP.
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