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DS521-30WB

Description
WBFBP-02C Plastic-Encapsulate Diodes
File Size468KB,2 Pages
ManufacturerWILLAS ELECTRONIC CORP.
Websitehttp://www.willas.com.tw/
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DS521-30WB Overview

WBFBP-02C Plastic-Encapsulate Diodes

FM120-M
DS521-30WB
THRU
WBFBP-02C Plastic-Encapsulate Diodes
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
Batch process design, excellent power dissipation offers
Schottky
Barrier Diode
better reverse leakage current and thermal resistance.
DESCRIPTION
Low profile surface mounted application in order to
optimize board
Silicon Epitaxial Planar
space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High
FEATURES
surge capability.
Guardring for overvoltage protection.
Small surface mounting type
Ultra high-speed switching.
Silicon epitaxial
High reliability
planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
WILLAS
PACKAGE
Pb Free Product
Features
Package outline
WBFBP-02C
SOD-123H
(1.0×0.6×0.5)
unit: mm
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
RoHS
APPLICATION
product for packing code suffix "G"
Halogen free product for packing
High speed switching for detection
code suffix "H"
Mechanical data
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
Epoxy : UL94-V0 rated flame retardant
DVD-ROM, Note
Book
PC, etc.)
Case : Molded plastic, SOD-123H
,
package is
terminals, solderable per MIL-STD-750
Pb-Free
Terminals :Plated
available
0.040(1.0)
0.024(0.6)
MIL-STD-19500 /228
0.031(0.8) Typ.
0.031(0.8) Typ.
RoHS product
:
for packing code suffix ”G”
Polarity Indicated by cathode band
free product
: Any
Halogen
Mounting Position
for packing code suffix “H”
Weight : Approximated 0.011 gram
Method 2026
Dimensions in inches and (millimeters)
MARKING: F
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
 
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Maximum Ratings and Electrical Characteristics,
12
Single Diode
14
@Ta=25℃
Marking Code
13
15
Maximum Recurrent Peak Reverse Voltage
Maximum RMS
Parameter
Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
Symbol
V
RMS
V
R
V
DC
I
O
 
I
FSM
V
RRM
20
14
30
21
40
50
50
16
60
42
60
1.0
 
30
40
120
18
80
56
80
10
100
100
115
150
150
120
200
140
200
V
28
40
Limit
35
30
70
Unit
105
V
DC reverse voltage
 
20
30
V
V
mA
A
Mean
Forward Surge Current 8.3 ms single half sine-wave
I
O
Peak
rectifying current
Peak forward surge current
2)
Typical Thermal Resistance (Note
Power dissipation
Range
Operating Temperature
superimposed on rated load (JEDEC method)
100
 
A
I
FSM
R
ΘJA
C
J
T
P
D
J
TSTG
 
1
100
1000
 
A
mW
Typical Junction Capacitance (Note 1)
Storage Temperature Range
 
-55 to +125
 
-55 to +150
 
-
65
to +175
Thermal Resistance from
 
Junction to
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
CHARACTERISTICS
Ambient
R
θJA
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
℃/W
V
F
0.50
0.70
0.85
0.5
10
0.9
0.92
 
V
Maximum Average Reverse
Junction temperature
Current at @T A=25℃
@T A=125℃
 
T
j
I
R
T
stg
125
m
NOTES:
Storage temperature
-55~+150
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Electrical Ratings @Ta=25℃
 
 
Parameter
Forward voltage
Reverse current
Symbol
V
F
I
R
Min
Typ
Max
0.35
10
Unit
V
μA
Conditions
I
F
=10mA
V
R
=10V
2012-06
WILLAS ELECTRONIC CORP
2012-11
WILLAS ELECTRONIC CORP.

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