FM120-M
THRU
DS751-40WB
WBFBP-02C
MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Plastic-Encapsulate Diodes
FM1200-M
1.0A SURFACE
SOD-123
•
Batch process design,
Schottky barrier Diode
leakage excellent power dissipation offers
better reverse
current and thermal resistance.
DESCRIPTION
profile surface mounted application in order to
•
Low
optimize board space.
Silicon epitaxial
power loss, high efficiency.
planar
•
Low
•
High current capability, low forward voltage drop.
•
High surge capability.
FEATURES
•
Guardring for overvoltage protection.
Small
•
Ultra high-speed switching.
surface mounting type
•
Silicon epitaxial planar chip, metal
voltage
Low reverse current and low forward
silicon junction.
•
Lead-free parts meet environmental standards of
High reliability
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
SOD-123H
WBFBP-02C
0.146(3.7)
(1.0×0.6×0.5)
0.130(3.3)
unit: mm
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Pb-Free package
Method 2026
is available
•
Polarity : Indicated by
code
band
RoHS product for packing
cathode
suffix ”G”
•
Mounting Position : Any
Halogen free product for packing code suffix “H”
•
Weight : Approximated 0.011 gram
MARKING:
5
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
RATINGS
Marking Code
im
12
20
14
13
30
21
30
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
ina
ry
14
15
Limits
40
50
28
40
16
60
42
60
1.0
30
40
120
V
RMS
V
DC
20
APPLICATION
Mechanical data
High speed
Epoxy : UL94-V0
detection
retardant
switching
for
rated flame
•
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
•
Case : Molded plastic, SOD-123H
DVD-ROM,
Terminals :Plated terminals, solderable per MIL-STD-750 ,
•
Note book PC, etc.)
Halogen free product for packing code suffix "H"
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Pr
el
Parameter
Maximum Recurrent Peak Reverse Voltage
Peak reverse voltage
Symbol
V
RRM
V
RM
18
80
56
80
10
Unit
100
70
100
115
150
105
150
120
200
140
200
Maximum RMS Voltage
Maximum DC Blocking Voltage
40
30
30
35
50
V
V
DC
Maximum Average Forward Rectified Current
reverse voltage
superimposed on rated load (JEDEC method)
Peak Forward Surge Current 8.3 ms single half sine-wave
Mean rectifying current
I
O
I
FSM
V
R
I
O
mA
Peak forward surge current
Power dissipation
Operating Temperature Range
Storage Temperature Range
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
I
FSM
P
D
R
ΘJA
C
J
T
J
-55 to +125
150
100
1000
mA
mW
-
65
to +175
-55 to +150
Thermal Resistance from
TSTG
CHARACTERISTICS
Junction to Ambient
Maximum Forward Voltage at 1.0A DC
R
θJA
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
℃/W
℃
℃
Junction temperature
Maximum Average Reverse Current at @T A=25℃
T
j
V
F
I
R
0.50
1
5
-55~+150
0.70
0.5
10
0.85
0.9
0.92
Rated
temperature
Storage
DC Blocking Voltage
NOTES:
@T A=125℃
T
stg
Electrical Ratings
and applied reverse voltage of 4.0 VDC.
@Ta=25℃
1- Measured at 1 MHZ
2- Thermal Resistance From Junction to Ambient
Parameter
Symbol
V
F
I
R
C
T
Min
Typ
Max
0.37
0.5
Unit
V
μA
pF
Conditions
I
F
=1mA
V
R
=30V
V
R
=1V,f=1MHZ
Forward voltage
Reverse current
Capacitance between terminals
2
2012-06
WILLAS ELECTRONIC COR
2012-11
WILLAS ELECTRONIC CORP.
FM120-M
DS751-40WB
THRU
WBFBP-02C
MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Plastic-Encapsulate Diodes
FM1200-M
1.0A SURFACE
SOD-123
PACKAGE
WILLAS
Pb Free Produc
Outline Drawing
•
Low profile surface mounted application in order to
optimize board space.
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Features
Package outline
WBFBP-02C
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
•
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
.000(0.01)REF.
.017(0.45)REF.
0.071(1.8)
0.056(1.4)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
.018(0.45)
.012(0.30)
.014(0.35)
0.040(1.0)
0.024(0.6)
.010(0.25)
0.031(0.8) Typ.
0.031(0.8) Typ.
.026(0.65)
.022(0.55)
.014(0.35)
.010(0.25)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.041(1.05)
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
im
i
V
RRM
V
RMS
V
DC
I
O
I
FSM
12
20
14
13
30
14
40
20
R
ΘJA
C
J
T
J
TSTG
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
na
.0016(0.400)REF.
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Pr
el
.037(0.95)
Maximum Average Forward Rectified Current
ry
.004(0.10)
21
28
30
40
.000(0.01)
Dimensions in inches and (millimeters)
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
.022(0.55)
.018(0.45)
-55 to +125
40
120
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
Rev.B
2012-06
WILLAS ELECTRONIC COR
2012-11
WILLAS ELECTRONIC CORP.
MCU
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