Ordering number : EN9050A
BXL4004
SANYO Semiconductors
DATA SHEET
BXL4004
Features
•
•
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
•
ON-resistance RDS(on)1=3m
Ω
(typ.)
4.5V drive
Input capacitance Ciss=8200pF (typ.)
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
PW≤10μs, duty cycle≤1%
Tc=25°C
Conditions
Ratings
40
±20
100
400
1.75
75
150
-
-55 to +150
420
60
Unit
V
V
A
A
W
W
°C
°C
mJ
A
Note :
*1
VDD=24V, L=100
μ
H, IAV=60A (Fig.1)
*2
L
≤
100
μ
H, Single pulse
Package Dimensions
unit : mm (typ)
7536-001
BXL4004-1E
10.0
(1.7)
1.3
3.6
2.8
4.5
1.3
Product & Package Information
• Package
: TO-220-3L
• JEITA, JEDEC
: SC-46, TO-220AB
• Minimum Packing Quantity : 50 pcs./magazine
Marking
Electrical Connection
2
(0.6)
15.7
8.9 MAX
13.3
XL4004
LOT No.
9.2
1
3.0
1.52
13.08
1.27
0.8
3
0.5
1 2 3
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220-3L
2.54
2.54
2.4
http://www.sanyosemi.com/en/network/
82912 TKIM TC-00002738/41112QA TKIM TC-00002736 No.9050-1/7
BXL4004
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
IS=100A, VGS=0V
See Fig.3
IS=100A, VGS=0V, di/dt=100A/μs
VDS=24V, VGS=10V, ID=100A
See Fig.2
VDS=20V, f=1MHz
Conditions
ID=1mA, VGS=0V
VDS=40V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=50A
ID=50A, VGS=10V
ID=50A, VGS=4.5V
Ratings
min
40
10
±10
1.2
120
3
4.7
8200
940
700
65
390
510
360
140
43
25
1.0
90
230
1.2
3.9
6.6
2.6
typ
max
Unit
V
μA
μA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Fig.1 Unclamped Inductive Switching Test Circuit
Fig.2 Switching Time Test Circuit
VIN
VDD=24V
L
≥50Ω
BXL4004
10V
0V
50Ω
VDD
10V
0V
VIN
PW=10μs
D.C.≤1%
G
D
ID=50A
RL=0.48Ω
VOUT
BXL4004
P.G
50Ω
S
Fig.3 Reverse Recovery Time Test Circuit
BXL4004
D
L
G
S
VDD
Driver MOSFET
Ordering Information
Device
BXL4004-1E
Package
TO-220-3L
Shipping
50pcs./magazine
memo
Pb Free and Halogen Free
No.9050-2/7
BXL4004
200
180
160
ID -- VDS
10V
6V
180
160
Drain Current, ID -- A
140
120
100
80
60
40
20
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Drain Current, ID -- A
140
120
100
80
60
40
VGS=3.5V
0
0
1
2
25
°
20
3
--25
°
C
C
Tc=7
5
°
C
Tc= --2
5
°
C
75
°
C
25
°
C
4
5
Tc=25
°
C
8V
4.5V
200
ID -- VGS
VDS=10V
6
7
IT16818
Drain-to-Source Voltage, VDS -- V
9
RDS(on) -- VGS
IT16817
9
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Tc
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
10
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
8
ID=50A
Single pulse
Single pulse
8
7
6
5
4
3
2
1
0
--50
--25
0
25
50
75
100
125
150
Tc=75
°
C
25
°
C
--25
°
C
A
=50
, ID
V
=4.5
VGS
A
=50
, ID
V
=10
VGS
Gate-to-Source Voltage, VGS -- V
1000
7
5
3
2
100
7
5
3
2
10
7
5
3
2
1.0
0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
|
y
fs
|
-- ID
IT16819
1000
7
5
3
2
Case Temperature, Tc --
°
C
IS -- VSD
IT16820
Forward Transfer Admittance,
|
y
fs
|
-- S
VDS=10V
VGS=0V
Single pulse
Source Current, IS -- A
°
C
25
5
°
C
--2
=
Tc
°
C
75
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
Drain Current, ID -- A
1000
7
5 7 100
IT16821
0
0.2
0.4
Tc=
7
0.6
--25
°
C
0.8
5
°
C
25
°
C
1.0
1.2
IT16822
SW Time -- ID
td (off)
tf
100000
7
5
3
2
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
Switching Time, SW Time -- ns
5
Ciss, Coss, Crss -- pF
3
2
100
7
5
3
2
10
0.1
tr
10000
7
5
3
2
1000
7
5
3
2
Ciss
td(on)
Coss
Crss
VDD=24V
VGS=10V
2
3
5 7 1.0
2
3
5 7 10
2
3
Drain Current, ID -- A
5 7 100
IT16823
100
0
5
10
15
20
25
30
IT16824
Drain-to-Source Voltage, VDS -- V
No.9050-3/7
BXL4004
10
9
VGS -- Qg
VDS=24V
ID=100A
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
8
7
6
5
4
3
2
1
0
0
20
40
60
80
100
120
140
IT16825
1000
7
5
3
2
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
ASO
IDP=400A(PW≤10μs)
ID=100A
1m
s
10
10
ms
0m
s
DC
op
era
tio
n
Operation in
this area is
limited by RDS(on).
10
μ
s
10
0
μ
s
0.1
0.1
Tc=25
°
C
Single pulse
2
3
5 7 1.0
2
3
5 7 10
2
3
Total Gate Charge, Qg -- nC
2.5
PD -- Ta
Drain-to-Source Voltage, VDS -- V
80
PD -- Tc
5 7 100
IT16826
Allowable Power Dissipation, PD -- W
2.0
1.75
1.5
Allowable Power Dissipation, PD -- W
0
20
40
60
80
100
120
140
160
75
70
60
50
40
30
20
10
0
1.0
0.5
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
120
EAS -- Ta
IT16828
Case Temperature, Tc --
°C
IT16827
Avalanche Energy derating factor -- %
100
80
60
40
20
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT16829
No.9050-4/7
BXL4004
Magazine Specification
BXL4004-1E
No.9050-5/7
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