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EN9000A

Description
Low Voltage Drive Switching Device Applications
File Size491KB,7 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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EN9000A Overview

Low Voltage Drive Switching Device Applications

Ordering number : EN9000A
MCH3383
SANYO Semiconductors
DATA SHEET
MCH3383
Features
P-Channel Silicon MOSFET
Low Voltage Drive Switching Device
Applications
ON-resistance RDS(on)1=57m
Ω
(typ.)
0.9V drive
Halogen free compliance
Protection diode in
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Operating Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Topr
Tstg
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
×0.8mm)
2
Conditions
Ratings
--12
±5
-
-3.5
-
-14
1.0
150
--5 to +150
-
-55 to +150
Unit
V
V
A
A
W
°C
°C
°C
Package Dimensions
unit : mm (typ)
7019A-003
MCH3383-TL-H
0.25
2.0
0.15
Product & Package Information
• Package
: MCPH3
• JEITA, JEDEC
: SC-70, SOT-323
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
3
2.1
1.6
0 t o 0.02
TL
QQ
LOT No.
LOT No.
1
0.25
0.65
2
0.3
Electrical Connection
3
0.85
0.07
1 : Gate
2 : Source
3 : Drain
SANYO : MCPH3
1
2
http://semicon.sanyo.com/en/network
53012TKIM/62211PE TKIM TC-00002604 No.9000-1/7

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EN9000A MCH3383_12 MCH3383
Description Low Voltage Drive Switching Device Applications Low Voltage Drive Switching Device Applications Low Voltage Drive Switching Device Applications
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