TLMW330.
Vishay Semiconductors
Power SMD LED
Description
This device have been designed to meet the increas-
ing demand for white SMD LED.
The package of the TLMW330. is the PLCC-2.
It consists of a lead frame which is embedded in a
white thermoplast. The reflector inside this package is
filled with a mixture of epoxy and TAG phosphor.
The TAG phosphor converts the blue emission par-
tially to yellow, which mixes with the remaining blue to
give white.
19225
e3
Pb
Pb-free
Features
• High efficient InGaN technology
• Chromaticity Coordinate categorized according
to CIE1931 per packing unit
• Luminous intensity ratio in one packing unit
I
Vmax
/I
Vmin
≤
1.75
• Typical color temperature 5500 K
• ESD class 1
• EIA and ICE standard package
• Compatible with infrared, vapor phase and wave
solder processes according to CECC
• Available in 8 mm tape reel
• Lead-free device
Applications
Automotive: Backlighting in dashboards and switches
Telecommunication: Indicator and backlighting in
telephone and fax
Backlighting for audio and video equipment
Backlighting in office equipment
Indoor and outdoor message boards
Flat backlight for LCDs, switches and symbols
Illumination purposes, alternative to incandescent
lamps
General use
Parts Table
Part
TLMW3300
Color, Luminous Intensity
White, I
V
= 500 mcd (typ.)
Angle of Half Intensity (±ϕ)
60 °
Technology
InGaN / TAG on SiC
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
TLMW330.
Parameter
Reverse voltage
DC Forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
T
amb
≤
50 °C
t
p
≤
10
µs
T
amb
≤
50 °C
Test condition
Symbol
V
R
I
F
I
FSM
P
V
T
j
T
amb
Value
5
30
0.1
127
100
- 40 to + 100
Unit
V
mA
A
mW
°C
°C
Document Number 83290
Rev. 1.2, 27-Sep-04
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1
TLMW330.
Vishay Semiconductors
Parameter
Storage temperature range
Soldering temperature
Thermal resistance junction/
ambient
t
≤
5s
mounted on PC board
(pad size > 16 mm
2
)
Test condition
Symbol
T
stg
T
sd
R
thJA
Value
- 40 to + 100
260
400
Unit
°C
°C
K/W
Optical and Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
White
TLMW330.
Parameter
Luminous intensity
Chromaticity coordinate x acc.
to CIE 1931
Chromaticity coordinate y acc.
to CIE 1931
Angle of half intensity
Forward voltage
Reverse voltage
Temperature coefficient of V
F
Temperature coefficient of I
V
Test condition
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
R
= 10
µA
I
F
= 20 mA
I
F
= 20 mA
Part
TLMW3300
TLMW3300
TLMW3300
Symbol
I
V
x
y
ϕ
V
F
V
R
TC
VF
TC
IV
5
-4
- 0.5
Min
250
0.315
0.290
± 60
3.7
4.2
Typ.
500
0.365
0.440
deg
V
V
mV/K
%/K
Max
Unit
mcd
Chromaticity Coordinate Classification
Group
min
3a
3b
3c
3d
4a
4b
4c
4d
5a
5b
5c
5d
0.2900
0.3025
0.2900
0.3025
0.3150
0.3275
0.3150
0.3275
0.3400
0.3525
0.3400
0.3525
X
max
0.3025
0.3150
0.3025
0.3150
0.3275
0.3400
0.3275
0.3400
0.3525
0.3650
0.3525
0.3650
min
Y = 1.4 x - 0.121
Y = 1.4 x - 0.121
Y = 1.4 x - 0.171
Y = 1.4 x - 0.171
Y = 1.4 x - 0.121
Y = 1.4 x - 0.121
Y = 1.4 x - 0.171
Y = 1.4 x - 0.171
Y = 1.4 x - 0.121
Y = 1.4 x - 0.121
Y = 1.4 x - 0.171
Y = 1.4 x - 0.171
Y
max
Y = 1.4 x - 0.071
Y = 1.4 x - 0.071
Y = 1.4 x - 0.121
Y = 1.4 x - 0.121
Y = 1.4 x - 0.071
Y = 1.4 x - 0.071
Y = 1.4 x - 0.121
Y = 1.4 x - 0.121
Y = 1.4 x - 0.071
Y = 1.4 x - 0.071
Y = 1.4 x - 0.121
Y = 1.4 x - 0.121
Luminous Intensity Classification
Group
min
Ya
Yb
Za
Zb
250
320
400
500
Luminous Intensity (mcd)
max
400
500
630
800
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2
Document Number 83290
Rev. 1.2, 27-Sep-04
TLMW330.
Vishay Semiconductors
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
100
200
180
P
V
- Power Dissipation (mW)
I
F
- Forward Current ( mA
)
160
140
120
100
80
60
40
20
0
0
25
50
75
100
125
R
thJA
= 400K/W
10
1
2.0
19035
2.5
3.0
3.5
4.0
4.5
5.0
V
F
- Forward Voltage ( V )
19033
T
amb
- Ambient Temperature (
°C
)
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 4. Forward Current vs. Forward Voltage
40
I
V rel
- Relative Luminous Intensity
100
90
80
70
60
50
40
30
20
10
0
400 450 500 550 600 650 700 750 800
16196
35
I
F
- Forward Current ( mA)
30
25
20
15
10
5
0
0
10 20 30 40 50 60 70 80 90 100
T
amb
- Ambient Temperature (
°C
)
19034
λ
- Wavelength ( nm )
Figure 2. Forward Current vs. Ambient Temperature for InGaN
Figure 5. Relative Intensity vs. Wavelength
10
I
Vrel
- Relative Luminous Intensity
2.0
I
Vrel
- Relative Luminous Intensity
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 10 20
30 40 50 60 70 80 90 100
1
0.1
0.01
1
16194
10
I
F
- Forward Current ( mA )
100
16197
T
amb
- Ambient Temperature (
°
C )
Figure 3. Relative Luminous Intensity vs. Forward Current
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
Document Number 83290
Rev. 1.2, 27-Sep-04
www.vishay.com
3
TLMW330.
Vishay Semiconductors
f - Chromaticity coordinate shift (x,y)
0.345
White
0.340
Y and Y’ Coordinates
0.44
0.42
0.40
0.38
0.36
0.34
0.32
0.30
0.28
0.26
0.24
0.22
0.28 0.29 0.30 0.31 0.32 0.33 0.34 0.35 0.36 0.37
19037
3d
3c
3a
4c
4a
3b
4d
4b
5d
5c
5a
5b
X
0.335
0.330
Y
0.325
0.320
0.315
0
10
20
30
40
50
60
I
F
- Forward Current ( mA )
16198
X Coordinates
Figure 7. Chromaticity Coordinate Shift vs. Forward Current
Figure 10. Coordinates of Colorgroups
∆
V
F
- Change of Forward Voltage (mV)
3.95
3.90
I
F
- Forward Voltage ( V )
600
500
400
300
200
100
0
-100
-200
-300
-50
-25
0
25
50
75
100
10 mA
20 mA
30 mA
3.85
3.80
3.75
3.70
3.65
3.60
3.55
3.50
3.45
0 10 20
30 40 50 60 70 80 90 100
16199
T
amb
- Ambient Temperature (
°
C )
19036
T
amb
- Ambient Temperature (
°C
)
Figure 8. Forward Voltage vs. Ambient Temperature
Figure 11. Change of Forward Voltage vs. Ambient Temperature
0°
I
V re l
- Relative Luminous Intensity
10°
20°
30°
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
0.2
0.4
0.6
95 10319
Figure 9. Rel. Luminous Intensity vs. Angular Displacement
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4
Document Number 83290
Rev. 1.2, 27-Sep-04
TLMW330.
Vishay Semiconductors
Package Dimensions in mm
3.5 ± 0.2
+ 0.10
1.65- 0.05
technical drawings
according to DIN
specifications
0.85
Mounting Pad Layout
Pin identification
1.2
area covered with
solder resist
2.6 (2.8)
+ 0.15
2.2
C
A
2.8
4
1.6 (1.9)
∅
2.4
3
+ 0.15
Dimensions: IR and Vaporphase
(Wave Soldering)
Drawing-No. : 6.541-5025.01-4
Issue: 7; 05.04.04
95 11314
Document Number 83290
Rev. 1.2, 27-Sep-04
4
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5
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