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934068873023

Description
MOSFET N-CH 12V 6WLCSP
CategoryDiscrete semiconductor    The transistor   
File Size771KB,15 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance  
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934068873023 Overview

MOSFET N-CH 12V 6WLCSP

934068873023 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNexperia
Reach Compliance Codecompliant
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage12 V
Maximum drain current (ID)7.3 A
Maximum drain-source on-resistance0.022 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PBGA-B6
Humidity sensitivity level1
Number of components1
Number of terminals6
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formGRID ARRAY
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
GuidelineIEC-60134
surface mountYES
Terminal formBALL
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
PMCM6501VNE
26 August 2015
12 V, N-channel Trench MOSFET
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level
Chip-Size Package (WLCSP) using Trench MOSFET technology.
2. Features and benefits
Low threshold voltage
Ultra small package: 0.98 × 1.48 × 0.35 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= 4.5 V; T
amb
= 25 °C; t ≤ 5 s
V
GS
= 4.5 V; I
D
= 3 A; T
j
= 25 °C
[1]
Conditions
T
j
= 25 °C
Min
-
-8
-
Typ
-
-
-
Max
12
8
9.6
Unit
V
V
A
Static characteristics
drain-source on-state
resistance
[1]
2
-
15
18
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm .

934068873023 Related Products

934068873023 PMCM6501VNEZ
Description MOSFET N-CH 12V 6WLCSP MOSFET N-CH 12V 6WLCSP
Maker Nexperia Nexperia
Reach Compliance Code compliant compliant
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 12 V 12 V
Maximum drain current (ID) 7.3 A 7.3 A
Maximum drain-source on-resistance 0.022 Ω 0.022 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PBGA-B6 R-PBGA-B6
Number of components 1 1
Number of terminals 6 6
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form GRID ARRAY GRID ARRAY
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Guideline IEC-60134 IEC-60134
surface mount YES YES
Terminal form BALL BALL
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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