TF16A60
Standard Triac
Symbol
○
2.T2
V
DRM
= 600V
I
T(RMS)
= 16 A
TO-220F
▼
▲
○
3.Gate
I
TSM
= 168A
1
2
3
1.T1
○
Features
Repetitive Peakk Off-State Voltage : 600V
◆
R.M.S On-State Current ( I
T(RMS)
= 16 A )
◆
High Commutation dv/dt
◆
General Description
This device is fully isolated p ackage suitable for AC sw itching app lication, phase control application
such as
spe ed and tem perature modulation con trol, in dustrial a nd domestic lighting co ntrol an d
static switching relay.
This device may substitute for BTA16-600,
BTB16-600,
BT139-600, BCR16PM-12, TM1661M/S-L
series.
Absolute Maximum Ratings
Symbol
V
DRM
I
T(RMS)
I
TSM
I
2
t
P
G(AV)
I
GM
T
J
T
STG
( Tj = 25°C unless otherwise specified )
Condition
Sine wave, 50 to 60 Hz
T
j
= 125 °C,
Full Sine wave
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
tp =10ms
Tj=125°C
T
j
=125°C
Parameter
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I
2
t
Average Gate Power Dissipation
Peak Gate Current
Operating Junction Temperature
Storage Temperature
Ratings
600
Units
V
A
A
A
2
s
W
A
°C
°C
..
16
160/168
128
1
2
- 40 ~ 125
- 40 ~ 150
July,
2010. Rev.2
copyright @ Apollo Electron Co., Ltd. All rights reserved.
1/6
TF16A60
Electrical Characteristics
(Tj=25 °C unless otherwise specified)
Symbol
Items
Repetitive Peak Off-State
Current
Peak On-State Voltage
Ⅰ
Ⅱ
Ⅲ
Ⅰ
Ⅱ
Ⅲ
Non-Trigger Gate Voltage
Critical Rate of Rise Off-State
Voltage
Holding Current
T
J
= 125 °C, V
D
=V
DRM,
R
L
=3.3kΩ
T
J
= 125 °C,
V
D
=2/3 V
DRM
I
T
=0.2A
Gate Trigger Voltage
V
D
=
12
V, R
L
=30
Ω
Gate Trigger Current
V
D
=
12
V, R
L
=30
Ω
Conditions
V
D
= V
DRM
, Single Phase, Half Wave
Tj = 125 °C
I
TM
= 22.5 A,
tp=380
㎲
Ratings
Min.
----
─
─
─
─
─
─
─
Typ.
----
__
─
─
─
─
─
─
----
Max.
2.0
1.55
30
30
30
1.5
1.5
1.5
-----
Unit
I
DRM
V
TM
I
+GT1
I
-GT1
I
-GT3
V
+GT1
V
-GT1
V
-GT3
V
GD
dv/dt
I
H
mA
V
mA
V
0.2
V
200
---
----
----
V/㎲
mA
---
50
2/6
TF16A60
Fig 1. Gate Characteristics
Fig 2. On-State Voltage
10
1
V
GM
(10V)
10
2
P
G(AV)
(1W)
25
℃
10
On-State Current [A]
Gate Voltage [V]
P
GM
(5W)
T
J
= 125 C
1
o
10
I
GM
(2A)
0
T
J
= 25 C
o
10
-1
V
GD
(0.2V)
1
10
0
10
10
2
10
3
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate Current [mA]
On-State Voltage [V]
Fig 3. On State Current vs.
Maximum Power Dissipation
20
18
Fig 4. On State Current vs.
Allowable Case Temperature
Allowable Case Temperature [ C]
o
130
120
110
100
90
o
Power Dissipation [W]
16
14
12
10
8
6
4
2
0
0
2
π
θ
360°
θ
2
π
θ
= 180
o
θ
= 150
o
θ
= 120
θ
= 90
θ
= 60
θ
= 30
o
o
o
θ
: Conduction Angle
π
θ
θ
θ
= 30
2
π
o
o
80
70
60
360°
θ
: Conduction Angle
θ
θ
θ
θ
θ
10
12
14
16
= 60
o
= 90
o
= 120
o
= 150
o
= 180
18
20
4
6
8
10
12
14
16
18
20
0
2
4
6
8
RMS On-State Current [A]
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
200
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
10
Surge On-State Current [A]
150
60Hz
100
V
GT
(25 C)
V
GT
(t C)
V
o
o
_
GT3
1
50Hz
50
V
V
+
GT1
_
GT1
0
0
10
10
1
10
2
0.1
-50
0
50
100
o
150
Time (cycles)
Junction Temperature [ C]
3/6
TF16A60
Fig 7. Gate Trigger Current vs.
Junction Temperature
10
10
Fig 8. Transient Thermal Impedance
1
Transient Thermal Impedance [ C/W]
I
GT
(25 C)
I
GT
(t C)
o
o
o
1
I
+
GT1
I
I
0.1
-50
_
GT3
_
GT1
0
50
100
o
150
0.1
-2
10
10
-1
10
0
10
1
10
2
Junction Temperature [ C]
Time (sec)
4/6
TF16A60
TO-220F Package Dimension
Sym bol
A
B
C
D
E
F
G
H
I
J
K
L
M
N
MIN
9.88
15.30
2.95
10.30
0.95
1.81
0.50
3.00
4.35
6.20
0.41
2.30
2.53
2.34
IN C H ES
TYP
10.08
15.50
3.00
10.50
1.08
1.84
0.70
3.20
4.45
6.40
0.51
2.50
2.73
2.54
MAX
10.28
15.70
3.05
10.70
1.20
1.87
0.90
3.40
4.55
6.60
0.61
2.70
2.93
2.74
MILLIMETER S
MIN
25.10
25.60
38.86
39.37
7.49
7.62
26.16
26.67
2.41
2.74
4.60
4.67
1.27
1.78
7.62
8.13
11.05
11.30
15.75
16.26
1.28
1.03
5.84
6.35
6.43
6.93
5.94
6.45
TYP
26.11
39.88
7.75
27.18
3.05
4.75
2.29
8.64
11.56
16.76
1.54
6.86
7.44
6.96
5/6
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