Product specification
N-Channel Logic Level Enhancement Mode Field Effect Transistor
BSS7002DW
FEATURES
Low On-Resisrance.
Low Gate Threshold Voltage.
Low Input Capacitance.
Fast Switching Speed.
Low Input/Output Leakage.
Pb
Lead-free
SOT-363
ORDERING INFORMATION
Type No.
BSS7002DW
□
□:
none is for Lead Free package;
“G” is for Halogen Free package.
Marking
K7D
Package Code
SOT-363
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
ESD
V
DSS
V
GSS
I
D
Parameter
Electrostatic discharge voltage
Human Body Model
Drain-Source voltage
Gate -Source voltage
Drain current
-continuous
-Pulsed
-continuous
-Pulsed
Value
±2
60
±20
±300
±800
200
0.8
200
625
-65 to +150
Units
kV
V
V
mA
mA
mA
A
mW
℃/W
℃
I
S
P
D
R
ΘJA
T
J
, Tstg
Source current
Power Dissipation
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature
MTM0050A
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1
Product specification
N-Channel Logic Level Enhancement Mode Field Effect Transistor
BSS7002DW
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter
Gate leakage current
Forward voltage
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain cutoff Current
Symbol Test conditions
I
GSS
V
SD
V
(BR)DSS
V
GS(th)
I
DSS
V
GS
=±20V,V
DS
=0V
I
S
=300mA,V
GS
=0V
V
GS
=0V,I
D
=250uA
V
DS
= V
GS
, I
DS
=250uA
V
DS
=60V, V
GS
=0V
I
D
=500mA,V
GS
=10V
Drain-source on-state resistance
R
DS(on)
I
D
=50mA,V
GS
=5V
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-On Delay Time
Rise time
Turn-Off Delay Time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
︱Y
fs
︱
C
ISS
C
OSS
C
RSS
t
D(ON)
t
R
t
D(OFF)
t
F
Q
g
Q
gs
Q
gd
V
DD
=30V,V
GS
=10V
I
D
=200mA
V
DD
= 30V, I
D
= 150mA,
R
L
= 200Ω, V
GS
= 10V,
R
GEN
= 25Ω
6
5
25
80
3
0.6
0.5
6
V
DS
=10V,V
GS
=0V,f=1.0MHz
V
DS
=10V,I
D
=200mA
80
50
25
5
ns
ns
ns
ns
nC
nC
nC
pF
3
mS
63
1.1
2.4
0.06
2.5
Ω
MIN
TYP
MAX
±10
1.2
UNIT
μA
V
V
V
μA
MTM0050A
www.gmesemi.com
2
Product specification
N-Channel Logic Level Enhancement Mode Field Effect Transistor
BSS7002DW
TYPICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
MTM0050A
www.gmesemi.com
3
Product specification
N-Channel Logic Level Enhancement Mode Field Effect Transistor
BSS7002DW
PACKAGE OUTLINE
Plastic surface mounted package
A
SOT-363
SOT-363
E
Dim
A
Min
2.00
1.15
0.85
0.15
0.25
0.60
0.02
0.05
2.20
Max
2.20
1.35
1.05
0.35
0.40
0.70
0.10
0.15
2.40
K
B
B
C
D
D
G
H
C
J
E
G
H
J
K
All Dimensions in mm
SOLDERING FOOTPRINT
0.50
0.40
1.90
Unit : mm
PACKAGE INFORMATION
Device
BSS7002DW
Package
SOT-363
Shipping
3000/Tape&Reel
0.65
0.65
MTM0050A
www.gmesemi.com
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