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TIP102

Description
SILICON DARLINGTON POWER TRANSISTORS
CategoryDiscrete semiconductor    The transistor   
File Size94KB,3 Pages
ManufacturerCOMSET
Websitehttp://comset.halfin.com/
Environmental Compliance
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TIP102 Overview

SILICON DARLINGTON POWER TRANSISTORS

TIP102 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCOMSET
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
Shell connectionCOLLECTOR
Maximum collector current (IC)8 A
Collector-based maximum capacity200 pF
Collector-emitter maximum voltage100 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)200
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment2 W
Maximum power dissipation(Abs)80 W
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
VCEsat-Max2.5 V
SEMICONDUCTORS
NPN TIP100-101-102
SILICON DARLINGTON POWER TRANSISTORS
NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220
enveloppe. They are designed for general purpose amplifier and low-speed switching
applications.
PNP complements are TIP105-106-107
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
Collector-Base Voltage
Ratings
TIP100
TIP101
TIP102
TIP100
TIP101
TIP102
TIP100
TIP101
TIP102
TIP100
TIP101
TIP102
TIP100
TIP101
TIP102
TIP100
TIP101
TIP102
TIP100
TIP101
TIP102
TIP100
TIP101
TIP102
TIP100
TIP101
TIP102
TIP100
TIP101
TIP102
Value
60
80
100
60
80
100
5
Unit
V
V
CEO
Collector-Emitter Voltage
V
V
EBO
Emitter-Base Voltage
V
I
C
Collector Current
8
A
I
CM
Collector Peak Current
15
A
I
B
Base Current
1
A
@ T
c
< 25°
P
T
Power Dissipation
@ T
a
< 25°
80
Watts
2
T
J
Junction Temperature
150
°C
-65 to +150
T
s
Storage Temperature range
04/10/2012
COMSET SEMICONDUCTORS
1|3

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