DPE256S8N-30M datasheet, PDF - EEWORLD Datasheet

DPE256S8N-30M: DescriptionEEPROM Module, 256KX8, 300ns, Parallel, CMOS; Categorystorage storage; File Size217KB，6 Pages; ManufacturerTwilight Technology Inc.

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DPE256S8N-30M Overview

EEPROM Module, 256KX8, 300ns, Parallel, CMOS

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Twilight Technology Inc.
package instruction	DIP, DIP32,.6
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Maximum access time	300 ns
Other features	DATA RETENTION > 10 YEARS
Data polling	YES
Data retention time - minimum	10
JESD-30 code	R-XDMA-T32
memory density	2097152 bit
Memory IC Type	EEPROM MODULE
memory width	8
Number of functions	1
Number of terminals	32
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	256KX8
Package body material	UNSPECIFIED
encapsulated code	DIP
Encapsulate equivalent code	DIP32,.6
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
page size	128 words
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
Maximum standby current	0.0015 A
Maximum slew rate	0.085 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	NO

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